公开(公告)号：US11869807B2

公开(公告)日：2024-01-09

申请号：US17335399

申请日：2021-06-01

Applicant: Applied Materials, Inc.

Inventor： Lili Feng ,  Yuqiong Dai ,  Madhur Sachan ,  Regina Freed ,  Ho-yung David Hwang

IPC: H01L21/768 ,  H01L23/522

CPC classification number: H01L21/76885 ,  H01L21/76832 ,  H01L21/76837 ,  H01L23/5226

Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.

公开(公告)号：US20220004105A1

公开(公告)日：2022-01-06

申请号：US17349534

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Yuqiong Dai ,  Madhur Sachan ,  Regina Freed ,  Hoyung David Hwang

IPC: G03F7/40 ,  G03F7/16 ,  C23C16/06 ,  G03F7/20 ,  G03F7/004

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

公开(公告)号：US20210391215A1

公开(公告)日：2021-12-16

申请号：US17335399

申请日：2021-06-01

Applicant: Applied Materials, Inc.

Inventor： Lili Feng ,  Yuqiong Dai ,  Madhur Sachan ,  Regina Freed ,  Ho-yung David Hwang

IPC: H01L21/768 ,  H01L23/522

Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.