公开(公告)号：US12165877B2

公开(公告)日：2024-12-10

申请号：US17770019

申请日：2019-12-23

Applicant: Applied Materials, Inc.

Inventor： Zhigang Wang ,  Jiao Yang ,  Heng Wang ,  Alfredo Granados ,  Jon C. Farr ,  Ruizhe Ren

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  H01J37/32

Abstract: An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer (302) on a substrate (101) in an etch chamber (100) to form an open feature (360) having a bottom surface (312) and sidewalls in the material layer (302); (b) forming a protection layer (314) on the sidewalls and the bottom surface (312) of the open feature (360) from a protection layer (314) gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer (314) formed on the bottom surface (312) of the open feature (360) from a bottom surface (312) open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer (302) from the bottom surface (312) of the open feature (360) until a desired depth of the open feature (360) is reached.