公开(公告)号：US20200075434A1

公开(公告)日：2020-03-05

申请号：US16676216

申请日：2019-11-06

Applicant: Applied Materials Israel Ltd.

Inventor： Yotam SOFER ,  Ariel HIRSZHORN

IPC: H01L21/66 ,  G01N15/14

Abstract: A first defect map representing defects in a first semiconductor specimen in an attribute hyperspace may be received. Scores may be assigned to classified defects in the first defect map where an assigned score of a given defect of the classified defects in the first defect map is indicative of a number of defects within a threshold distance in the attribute hyperspace to the given defect in the first defect map that are classified to a same defect class as the given defect. A second defect map representing defects in a second semiconductor specimen in the attribute hyperspace may be received. Defects in the second defect map may be selected for review based on the scores assigned to the classified defects in the first defect map. The selected defects in the second defect map may be selected for classification.

公开(公告)号：US20190293569A1

公开(公告)日：2019-09-26

申请号：US15926990

申请日：2018-03-20

Applicant: Applied Materials Israel Ltd.

Inventor： Ariel HIRSZHORN ,  Yotam SOFER

IPC: G01N21/95 ,  G01N21/956 ,  G06T7/00

Abstract: Samples at a semiconductor wafer that have been reviewed by a review tool may be identified. Furthermore, a candidate sample at the semiconductor wafer that has not been reviewed by the review tool may be identified. A location of the candidate sample at the semiconductor wafer may and a number of the samples that have been reviewed that are at locations proximate to the location of the candidate sample may be determined. The candidate sample may be selected for review by the review tool based on the number of the plurality of samples that are at locations proximate to the location of the candidate sample.

公开(公告)号：US20190067134A1

公开(公告)日：2019-02-28

申请号：US15685781

申请日：2017-08-24

Applicant: Applied Materials Israel Ltd.

Inventor： Yotam SOFER ,  Ariel HIRSZHORN

IPC: H01L21/66 ,  G01N15/14

Abstract: There is provided a method of examining defects in a semiconductor specimen and a system thereof. The method comprises: processing a first defect map obtained for a first semiconductor specimen to assign cluster-seed (CS) scores to at least some of the classified defects presented therein, wherein a CS score of a given defect is indicative of a number of neighboring defects classified to the same class as the given defect; upon obtaining a second defect map for a second semiconductor specimen, using the CS scores assigned to the at least some of the classified defects presented in the first defect map to select, among defects presented in the second defect map, defects for review, wherein the first defect map and the second defect map present respective defects in an attribute hyperspace; and reviewing defects selected in the second defect map, thereby obtaining classified defects presented in the second semiconductor specimen.