公开(公告)号：US20230069303A1

公开(公告)日：2023-03-02

申请号：US17465753

申请日：2021-09-02

Applicant: Applied Materials Israel Ltd.

Inventor： Roman KRIS ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER ,  Vadim VERESCHAGIN ,  Elad SOMMER ,  Grigory KLEBANOV ,  Arundeepth THAMARASSERY ,  Jannelle Anna GEVA ,  Gal Daniel GUTTERMAN ,  Einat FRISHMAN ,  Sahar LEVIN

IPC: G01B9/02 ,  G01B11/24 ,  G06T7/00

Abstract: There is provided a system and method of a method of detecting a local shape deviation of a structural element in a semiconductor specimen, comprising: obtaining an image comprising an image representation of the structural element; extracting, from the image, an actual contour of the image representation; estimating a reference contour of the image representation indicative of a standard shape of the structural element, wherein the reference contour is estimated based on a Fourier descriptor representative of the reference contour, the Fourier descriptor being estimated using an optimization method based on a loss function specifically selected to be insensitive to local shape deviation of the actual contour; and performing one or more measurements representative of one or more differences between the actual contour and the reference contour, the measurements indicative of whether a local shape deviation is present in the structural element.

公开(公告)号：US20220207681A1

公开(公告)日：2022-06-30

申请号：US17135939

申请日：2020-12-28

Applicant: Applied Materials Israel Ltd.

Inventor： Roman KRIS ,  Grigory KLEBANOV ,  Einat FRISHMAN ,  Tal ORENSTEIN ,  Meir VENGROVER ,  Noa MAROM ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER ,  Sharon DUVDEVANI-BAR

IPC: G06T7/00 ,  G01N21/95 ,  G03F7/20

Abstract: There is provided a system and method of generating a metrology recipe usable for examining a semiconductor specimen, comprising: obtaining a first image set comprising a plurality of first images captured by an examination tool, obtaining a second image set comprising a plurality of second images, wherein each second image is simulated based on at least one first image, wherein each second image is associated with ground truth data; performing a first test on the first image set and a second test on the second image set in accordance with a metrology recipe configured with a first parameter set, and determining, in response to a predetermined criterion not being met, to select a second parameter set, configure the metrology recipe with the second parameter set, and repeat the first test and the second test in accordance with the metrology recipe configured with the second parameter set.

公开(公告)号：US20230230223A1

公开(公告)日：2023-07-20

申请号：US17580541

申请日：2022-01-20

Applicant: Applied Materials Israel Ltd.

Inventor： Einat FRISHMAN ,  Ilan BEN-HARUSH ,  Rafael BISTRITZER

IPC: G06T7/00

CPC classification number: G06T7/0006 ,  G06T2207/30148

Abstract: There is provided a system and a method comprising obtaining data Dcontour informative of a contour of an element of a semiconductor specimen acquired by an examination tool, using the data Dcontour to generate a signal informative of a curvature of the contour of the element, determining at least one of data Dperiodicity informative of a periodicity of the signal, or data Ddiscontinuities informative of a number of discontinuities in the signal, wherein each discontinuity is informative of a transition between a convex portion of the contour and a concave portion of the contour, and using at least one of the data Dperiodicity or the data Ddiscontinuities to determine data informative of correct manufacturing of the element.

公开(公告)号：US20220261979A1

公开(公告)日：2022-08-18

申请号：US17177119

申请日：2021-02-16

Applicant: Applied Materials Israel Ltd.

Inventor： Jitendra Pradipkumar CHAUDHARY ,  Roman KRIS ,  Ran ALKOKEN ,  Sahar LEVIN ,  Chih-Chieh CHANG ,  Einat FRISHMAN

IPC: G06T7/00 ,  H01L29/66 ,  G06T7/13 ,  G06T7/12

Abstract: There is provided a system and method of performing a measurement with respect to an epitaxy formed in a finFET, the epitaxy being separated with at least one adjacent epitaxy by at least one HK fin. The method comprises obtaining an image of the epitaxy and the at least one HK fin, and a gray level (GL) profile indicative of GL distribution of the image; detecting edges of the at least one HK fin; determining two inflection points of the GL profile within an area of interest in the image; performing a critical dimension (CD) measurement between the two inflection points; determining whether to apply correction to the CD measurement based on a GL ratio indicative of a relative position between the epitaxy and the at least one HK fin; and applying correction to the CD measurement upon the GL ratio meeting a predetermined criterion.