公开(公告)号：US20210383530A1

公开(公告)日：2021-12-09

申请号：US16892139

申请日：2020-06-03

Applicant: Applied Materials Israel Ltd.

Inventor： Irad PELEG ,  Ran SCHLEYEN ,  Boaz COHEN

IPC: G06T7/00 ,  G01N21/95 ,  G06T7/11 ,  G06N3/06 ,  G06K9/62

Abstract: A system of classifying a pattern of interest (POI) on a semiconductor specimen, the system comprising a processor and memory circuitry configured to: obtain a high-resolution image of the POI, and generate data usable for classifying the POI in accordance with a defectiveness-related classification, wherein the generating utilizes a machine learning model that has been trained in accordance with training samples comprising: a high-resolution training image captured by scanning a respective training pattern on a specimen, the respective training pattern being similar to the POI, and a label associated with the image, the label being derivative of low-resolution inspection of the respective training pattern.

公开(公告)号：US20230096362A1

公开(公告)日：2023-03-30

申请号：US18076324

申请日：2022-12-06

Applicant: Applied Materials Israel Ltd.

Inventor： Irad PELEG

IPC: G06T7/00 ,  G06N20/00

Abstract: There is provided a system to examine a semiconductor specimen, the system comprising a processor and memory circuitry configured to obtain a training sample comprising an image of a semiconductor specimen and a design image based on design data, train a machine learning module, wherein the training includes minimizing a function representative of a difference between a simulated image generated by the machine learning module based on a given design image, and a corrected image corresponding to a given image after correction of pixel position of the given image in accordance with a given displacement matrix, wherein the minimizing includes optimizing parameters of the machine learning module and of the given displacement matrix, wherein the trained machine learning module is usable to generate a simulated image of a specimen based on a design image of the specimen.

公开(公告)号：US20220301151A1

公开(公告)日：2022-09-22

申请号：US17751507

申请日：2022-05-23

Applicant: Applied Materials Israel Ltd.

Inventor： Irad PELEG ,  Ran SCHLEYEN ,  Boaz Cohen

IPC: G06T7/00 ,  G01N21/95 ,  G06T7/11 ,  G06N3/06 ,  G06K9/62 ,  G06V10/75

Abstract: A system of classifying a pattern of interest (POI) on a semiconductor specimen, the system comprising a processor and memory circuitry configured to: obtain a high-resolution image of the POI, and generate data usable for classifying the POI in accordance with a defectiveness-related classification, wherein the generating utilizes a machine learning model that has been trained in accordance with training samples comprising: a high-resolution training image captured by scanning a respective training pattern on a specimen, the respective training pattern being similar to the POI, and a label associated with the image, the label being derivative of low-resolution inspection of the respective training pattern.

公开(公告)号：US20220067918A1

公开(公告)日：2022-03-03

申请号：US17011949

申请日：2020-09-03

Applicant: Applied Materials Israel Ltd.

Inventor： Irad PELEG

IPC: G06T7/00 ,  G06N20/00

Abstract: There is provided a system to examine a semiconductor specimen, the system comprising a processor and memory circuitry configured to obtain a training sample comprising an image of a semiconductor specimen and a design image based on design data, train a machine learning module, wherein the training includes minimizing a function representative of a difference between a simulated image generated by the machine learning module based on a given design image, and a corrected image corresponding to a given image after correction of pixel position of the given image in accordance with a given displacement matrix, wherein the minimizing includes optimizing parameters of the machine learning module and of the given displacement matrix, wherein the trained machine learning module is usable to generate a simulated image of a specimen based on a design image of the specimen.

公开(公告)号：US20210209418A1

公开(公告)日：2021-07-08

申请号：US16733219

申请日：2020-01-02

Applicant: Applied Materials Israel Ltd.

Inventor： Ran BADANES ,  Ran SCHLEYEN ,  Boaz COHEN ,  Irad PELEG ,  Denis SUHANOV ,  Ore SHTALRID

IPC: G06K9/62 ,  G06T7/00

Abstract: There is provided a method of defect detection on a specimen and a system thereof. The method includes: obtaining a runtime image representative of at least a portion of the specimen; processing the runtime image using a supervised model to obtain a first output indicative of the estimated presence of first defects on the runtime image; processing the runtime image using an unsupervised model component to obtain a second output indicative of the estimated presence of second defects on the runtime image; and combining the first output and the second output using one or more optimized parameters to obtain a defect detection result of the specimen.