公开(公告)号：US08964452B2

公开(公告)日：2015-02-24

申请号：US13726800

申请日：2012-12-26

Applicant: Applied Micro Circuits Corporation

Inventor： Jason T. Su ,  Bin Liang

IPC: G11C11/00 ,  G11C7/10 ,  G11C11/419

CPC classification number: G11C7/1096 ,  G11C11/419

Abstract: Providing for improved write processes of a semiconductor memory are disclosed herein. By way of example, a programmable write assist can be provided that includes partially discharging a supply voltage applied to a memory cell. Partially discharging the supply voltage can improve write speeds to the memory cell, as well as improve reliability of the write process. A write assist circuit can cause the discharging in response to a resistance-modulated signal. Moreover, the resistance-modulated signal can be configured to control an amount or speed of the discharging of the supply voltage. Further, modulation control can be provided to mitigate discharging of the supply voltage beyond a target level, to reduce data loss in a target data cell or an adjacent data cell.

Abstract translation: 本文公开了提供半导体存储器的改进的写入处理。 作为示例，可以提供可编程写入辅助，其包括部分地放电施加到存储器单元的电源电压。 部分放电电源可以提高对存储单元的写入速度，并提高写入过程的可靠性。 写辅助电路可以响应于电阻调制信号而引起放电。 此外，电阻调制信号可以被配置为控制电源电压的放电的量或速度。 此外，可以提供调制控制以减轻电源电压超出目标电平的放电，以减少目标数据单元或相邻数据单元中的数据丢失。