Voltage level shifting circuitry
    1.
    发明授权

    公开(公告)号:US10784842B2

    公开(公告)日:2020-09-22

    申请号:US16239498

    申请日:2019-01-03

    Applicant: Arm Limited

    Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has first transistors arranged as a diode, a first latch and feedback assist to facilitate shifting an input voltage in a first voltage domain to an output voltage in a second voltage domain. The first stage uses the diode and the first latch to reduce contention between the first latch and input transistors. The diode, the first latch and the feedback assist enable activation of the input transistors with the input voltage. The second stage has second transistors arranged as a second latch followed by output buffers that provide a buffered output voltage as feedback to the feedback assist of the first stage.

    Voltage Level Shifting Circuitry
    2.
    发明申请

    公开(公告)号:US20200220529A1

    公开(公告)日:2020-07-09

    申请号:US16239498

    申请日:2019-01-03

    Applicant: Arm Limited

    Abstract: Various implementations described herein refer to an integrated circuit having a first stage and a second stage. The first stage has first transistors arranged as a diode, a first latch and feedback assist to facilitate shifting an input voltage in a first voltage domain to an output voltage in a second voltage domain. The first stage uses the diode and the first latch to reduce contention between the first latch and input transistors. The diode, the first latch and the feedback assist enable activation of the input transistors with the input voltage. The second stage has second transistors arranged as a second latch followed by output buffers that provide a buffered output voltage as feedback to the feedback assist of the first stage.

Patent Agency Ranking