公开(公告)号：US20060267134A1

公开(公告)日：2006-11-30

申请号：US11367247

申请日：2006-03-03

申请人： Armin Tilke ,  Danny Shum ,  Laura Pescini ,  Ronald Kakoschke ,  Karl Strenz ,  Martin Stiftinger

发明人： Armin Tilke ,  Danny Shum ,  Laura Pescini ,  Ronald Kakoschke ,  Karl Strenz ,  Martin Stiftinger

IPC分类号： H01L29/00

CPC分类号： H01L27/11526 ,  H01L21/76224 ,  H01L27/105 ,  H01L27/11521 ,  H01L27/11546

摘要： Deep trench isolation structures and methods of formation thereof are disclosed. Several methods of and structures for increasing the threshold voltage of a parasitic transistor formed proximate deep trench isolation structures are described, including implanting a channel stop region into the bottom surface of the deep trench isolation structures, partially filling a bottom portion of the deep trench isolation structures with an insulating material, and/or filling at least a portion of the deep trench isolation structures with a doped polysilicon material.

摘要翻译： 公开了深沟槽隔离结构及其形成方法。 描述了用于增加形成在深沟槽隔离结构附近的寄生晶体管的阈值电压的几种方法和结构，包括将沟道阻挡区域注入深沟槽隔离结构的底表面，部分地填充深沟槽隔离的底部 具有绝缘材料的结构，和/或用掺杂的多晶硅材料填充至少一部分深沟槽隔离结构。