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公开(公告)号:US06552411B2
公开(公告)日:2003-04-22
申请号:US09809887
申请日:2001-03-16
申请人: Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
发明人: Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
IPC分类号: H01L2900
CPC分类号: H01L21/324 , H01L21/2253 , H01L21/26513 , H01L21/326
摘要: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
摘要翻译: 一种用于在半导体器件中形成期望的接合剖面的方法。 将至少一种掺杂剂引入到半导体衬底中。 所述至少一种掺杂剂通过对所述半导体衬底和所述至少一种掺杂物退火而在所述半导体衬底中扩散,同时将所述半导体衬底暴露于电场。
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公开(公告)号:US06822311B2
公开(公告)日:2004-11-23
申请号:US10413301
申请日:2003-04-15
申请人: Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
发明人: Arne W. Ballantine , John J. Ellis-Monaghan , Toshihura Furukawa , Jeffrey D. Gilbert , Glenn R. Miller , James A. Slinkman
IPC分类号: H01L2900
CPC分类号: H01L21/2253 , C21D1/04 , H01L21/26513 , H01L21/324 , H01L21/326
摘要: A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
摘要翻译: 一种用于在半导体器件中形成期望的接合剖面的方法。 将至少一种掺杂剂引入到半导体衬底中。 所述至少一种掺杂剂通过对所述半导体衬底和所述至少一种掺杂物退火而在所述半导体衬底中扩散,同时将所述半导体衬底暴露于电场。
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