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公开(公告)号:US20070228514A1
公开(公告)日:2007-10-04
申请号:US11579679
申请日:2005-05-03
申请人: Arnoldus Den Dekker , Johannes Dijkhuis , Nicolas Pulsford , Jozef Van Beek , Freddy Roozeboom , Antonius Lucien Kemmeren , Johan Klootwijk , Maarten Nollen
发明人: Arnoldus Den Dekker , Johannes Dijkhuis , Nicolas Pulsford , Jozef Van Beek , Freddy Roozeboom , Antonius Lucien Kemmeren , Johan Klootwijk , Maarten Nollen
IPC分类号: H01L27/00
CPC分类号: H03H3/00 , H03H7/0123
摘要: The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical losses of the inductor and being provided with an electrically insulating surface layer on its first side. A first and a second lateral pin diode are defined in the substrate, each of the pin diodes having a doped p-region, a doped n-region and an intermediate intrinsic region. The intrinsic region of the first pin diode is larger than that of the second pin diode.
摘要翻译: 电子器件包括至少一个薄膜电容器的网络和在半导体材料的衬底的第一侧上的至少一个电感器。 衬底具有足够高的电阻以限制电感器的电损耗,并且在其第一侧上设置有电绝缘表面层。 在衬底中限定第一和第二横向pin二极管,每个pin二极管具有掺杂p区,掺杂n区和中间固有区。 第一pin二极管的本征区域大于第二pin二极管的本征区域。
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公开(公告)号:US20070018748A1
公开(公告)日:2007-01-25
申请号:US10558718
申请日:2004-05-26
IPC分类号: H01P5/12
CPC分类号: H03H7/06 , H01L2224/16145 , H01L2224/16245 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/48147 , H01L2224/48257 , H01L2224/4917 , H01L2224/73265 , H01L2924/181 , H03L7/093 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要: The electronic device (100) of the invention comprises a semiconductor device (30) and a low-pass filter (20), which are present in a stacked configuration, and which together include a phase locked loop. The low-pass filter is preferably embodied by vertical trench capacitors, and preferably comprises a drift compensation part. The device (100) can be suitably provided in an open loop architecture. In a preferred embodiment, the low-pass filter comprises a large capacitor (C2) and a small capacitor (C1) connected in parallel, the large capacitor (C2) being connected in series with a resistor (R1).
摘要翻译: 本发明的电子设备(100)包括半导体器件(30)和低通滤波器(20),其以堆叠的形式存在,并且一起包括锁相环。 低通滤波器优选地由垂直沟槽电容器实现,并且优选地包括漂移补偿部分。 设备(100)可以适当地设置在开环结构中。 在优选实施例中,低通滤波器包括并联连接的大电容器(C 2)和小电容器(C 1),大电容器(C 2)与电阻器(R 1)串联连接。
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