Touch sensitive display for a portable device
    2.
    发明申请
    Touch sensitive display for a portable device 有权
    便携式设备的触摸敏感显示屏

    公开(公告)号:US20060209039A1

    公开(公告)日:2006-09-21

    申请号:US10564920

    申请日:2004-07-08

    IPC分类号: G09G5/00

    摘要: A portable device is provided having a touch sensitive display (100) comprising an active matrix display element (101) and a touch sensitive element (103). The touch sensitive element (103) is disposed on the viewer distal side of the active matrix display element (101) thereby not affecting the display properties. The touch sensitive element (103) comprises a first and second conductive layer (113, 115) each having a plurality of conductors. The conductive layers (113, 115) sandwich a pressure sensitive layer (117) which modifies an electrical conductivity between two conductors of the two conductive layers (113, 115) in response to a pressure point resulting from an applied pressure. Thus, accurate position detection is achieved. The conductors may be aligned with the active matrix and the requirement for calibration may be obviated.

    摘要翻译: 提供了具有触敏显示器(100)的便携式设备,该触敏显示器(100)包括有源矩阵显示元件(101)和触敏元件(103)。 触敏元件(103)设置在有源矩阵显示元件(101)的观看者远侧,从而不影响显示属性。 触敏元件(103)包括每个具有多个导体的第一和第二导电层(113,115)。 导电层(113,115)夹着压力敏感层(117),该压力敏感层(117)响应于由所施加的压力导致的压力点而改变两个导电层(113,115)的两个导体之间的导电性。 因此,实现了精确的位置检测。 导体可以与有源矩阵对准,并且可以避免校准的要求。

    Touch sensitive display
    3.
    发明申请
    Touch sensitive display 审中-公开
    触摸敏感显示

    公开(公告)号:US20060214918A1

    公开(公告)日:2006-09-28

    申请号:US10567399

    申请日:2004-08-03

    IPC分类号: G09G5/00

    CPC分类号: G06F3/0412

    摘要: A touch sensitive display comprises pixels (18), each of the pixels (18) have a pixel electrode (22). An optical state of a pixel (18) depends on a drive voltage (VD) supplied to the pixel electrode (22). A touch sensitive elements (S1) is arranged between the pixel electrode (22) and a further electrode (40;17). The touch sensitive element (S1) has an impedance dependent on a mechanical force applied to it.

    摘要翻译: 触敏显示器包括像素(18),每个像素(18)具有像素电极(22)。 像素(18)的光学状态取决于提供给像素电极(22)的驱动电压(VD)。 在像素电极(22)和另一电极(40; 17)之间布置有触敏元件(S1)。 触敏元件(S1)具有取决于施加到其上的机械力的阻抗。

    Touch Sensitive Display
    4.
    发明申请
    Touch Sensitive Display 审中-公开
    触摸敏感显示

    公开(公告)号:US20070222762A1

    公开(公告)日:2007-09-27

    申请号:US10599827

    申请日:2005-04-08

    IPC分类号: G06F3/033

    摘要: There is provided a touch sensitive display comprising a passive substrate, an active substrate, and a display material disposed between the passive and active substrates, wherein driving circuitry for driving a pixel of the display and touch sensing circuitry are arranged on the active substrate. The touch sensing circuitry comprises at least one component with a first and a second electrode, wherein the electrodes are arranged to displace with respect to each other in response to a touch input.

    摘要翻译: 提供了包括无源基板,有源基板和布置在无源和有源基板之间的显示材料的触敏显示器,其中用于驱动显示器和触摸感测电路的像素的驱动电路被布置在有源基板上。 触摸感测电路包括具有第一和第二电极的至少一个部件,其中电极被布置为响应于触摸输入而相对于彼此移位。

    Method of Manufacturing an Electronic Device and Electronic Device
    5.
    发明申请
    Method of Manufacturing an Electronic Device and Electronic Device 有权
    电子设备和电子设备的制造方法

    公开(公告)号:US20070222007A1

    公开(公告)日:2007-09-27

    申请号:US10578026

    申请日:2004-10-26

    IPC分类号: H01L29/84 H01L21/00

    摘要: A method for manufacturing a micro-electromechanical systems (MEMS) device, comprising providing a base layer (10) and a mechanical layer (12) on a substrate (14), providing a sacrificial layer (16) between the base layer (10) and the mechanical layer (12), providing an etch stop layer (18) between the sacrificial layer (16) and the substrate (14), and removing the sacrificial layer (16) by means of dry chemical etching, wherein the dry chemical etching is performed using a fluorine-containing plasma, and the etch stop layer (18) comprises a substantially non-conducting, fluorine chemistry inert material, such as HfO2, ZrO2, Al2O3 or TiO2.

    摘要翻译: 一种用于制造微机电系统(MEMS)装置的方法,包括在基底(14)上提供基底层(10)和机械层(12),在基底层(10)之间提供牺牲层(16) 和所述机械层(12),在所述牺牲层(16)和所述衬底(14)之间提供蚀刻停止层(18),以及通过干法化学蚀刻去除所述牺牲层(16),其中所述干化学蚀刻 使用含氟等离子体进行,并且蚀刻停止层(18)包括基本上不导电的氟化学惰性材料,例如HfO 2,ZrO 2, ,Al 2 O 3 3或TiO 2。

    Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith
    6.
    发明申请
    Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith 有权
    用于制造微机电装置的方法和由其获得的微机电装置

    公开(公告)号:US20060040505A1

    公开(公告)日:2006-02-23

    申请号:US10531934

    申请日:2003-10-17

    IPC分类号: H01L21/302

    摘要: The invention relates to a method of manufacturing a micro-electromechanical device (10), in which are consecutively deposited on a substrate (1) a first electroconductive layer (2) in which an electrode (2A) is formed, a first electroinsulating layer (3) of a first material, a second electroinsulating layer (4) of a second material different from the first material, and a second electroconductive layer (5) in which a second electrode (5A) lying opposite the first electrode is formed which together with the first electrode (2A) and the first insulating layer (3) forms the device (10), in which after the second conductive layer (5) has been deposited, the second insulating layer (4) is removed by means of an etching agent which is selective with respect to the material of the second conductive layer (5). According to the invention for the first material and the second material materials are selected which are only limitedly selectively etchable with respect to each other and before depositing the second insulating layer (4) a further layer (6) is provided on top of the first insulating layer (3) of a further material that is selectively etchable with respect to the first material. In this way a silicon oxide and a silicon nitride may be applied for the insulating layers (3, 4) and thus the method according to the invention is very compatible with current IC processes. The second insulating layer (4) is preferably removed locally by etching, then the further layer (6) is completely removed by etching and, finally, the second insulating layer (4) is completely removed by etching.

    摘要翻译: 本发明涉及一种制造微机电器件(10)的方法,其中连续地沉积在其上形成有电极(2A)的第一导电层(2)的基板(1)上,第一电绝缘层 (3),与第一材料不同的第二材料的第二电绝缘层(4)和形成有与第一电极相对的第二电极(5A)的第二导电层(5),其中, 与第一电极(2A)和第一绝缘层(3)一起形成器件(10),其中在第二导电层(5)沉积之后,通过以下步骤除去第二绝缘层(4): 相对于第二导电层(5)的材料是选择性的蚀刻剂。 根据本发明,选择第一材料和第二材料材料,其仅相对于彼此有限地可选择性地蚀刻,并且在沉积第二绝缘层(4)之前,另外的层(6)设置在第一绝缘体 层(3),其可相对于第一材料可选择性地蚀刻。 以这种方式,可以对绝缘层(3,4)施加氧化硅和氮化硅,因此根据本发明的方法与当前的IC工艺非常兼容。 优选通过蚀刻局部地去除第二绝缘层(4),然后通过蚀刻完全去除另外的层(6),最后通过蚀刻完全去除第二绝缘层(4)。