公开(公告)号：US06233267B1

公开(公告)日：2001-05-15

申请号：US09233006

申请日：1999-01-19

Applicant: Arto V Nurmikko ,  Yoon-Kyu Song

Inventor： Arto V Nurmikko ,  Yoon-Kyu Song

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/12

Abstract: A vertical cavity, surface emitting laser (VCSEL) device (10, 10′) has a substrate (12) and, disposed over a surface of the substrate, a Group III nitride buffer layer (14) and a mesa structure containing at least a portion of an n-type Group III nitride layer (16). The VCSEL device and mesa structure further include a first multilayer dielectric mirror stack (18a), that is embedded within the first Group III nitride layer by the use of a lateral edge overgrowth (LEO) process; a p-type Group III nitride layer (26); and a p-n junction between the n-type Group III nitride layer and the p-type Group III nitride layer. The p-n junction contains an active multiquantum well region (24). Also contained in the mesa structure is a dielectric (silicon dioxide) layer (20) having a current constricting aperture (20a). The dielectric layer and aperture are buried within one of the n-type Group III nitride layer or the p-type Group III nitride layer, also by the use of the LEO process. A second multilayer dielectric mirror stack (18b) is disposed on top of the mesa structure and over the p-type Group III nitride layer. The first and second multilayer dielectric mirror stacks define a resonant optical cavity structure that passes through the aperture, and that supports an emission of less than 500 nm in the blue/green or NUV spectral regions.

Abstract translation: 垂直腔表面发射激光器（VCSEL）装置（10,10'）具有衬底（12），并且设置在衬底的表面上，具有第III族氮化物缓冲层（14）和包含至少 部分为n型III族氮化物层（16）。 VCSEL器件和台面结构还包括通过使用横向边缘过度生长（LEO）工艺嵌入在第一III族氮化物层内的第一多层介电镜叠层（18a）; p型III族氮化物层（26）; 以及n型III族氮化物层和p型III族氮化物层之间的p-n结。 p-n结包含活性多量子阱区（24）。 也包含在台面结构中的是具有电流收缩孔（20a）的电介质（二氧化硅）层（20）。 电介质层和孔径也被埋在n型III族氮化物层或p型III族氮化物层之一内，也通过使用LEO工艺。 第二多层介质镜叠层（18b）设置在台面结构的顶部和p型III族氮化物层上方。 第一和第二多层介质镜叠层限定了通过孔的共振光学腔结构，并支持在蓝/绿或NUV光谱区中小于500nm的发射。

公开(公告)号：US07551657B2

公开(公告)日：2009-06-23

申请号：US12288173

申请日：2008-10-16

Applicant: Arto V Nurmikko

Inventor： Arto V Nurmikko

IPC: H01S3/30 ,  H01S3/00

CPC classification number: G01R33/093 ,  B82Y25/00 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/0607 ,  H01S5/183

Abstract: A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

Abstract translation: 磁光电装置MOD（10）包括与诸如LED或激光二极管的半导体光发射器（14）组合的诸如磁阻器件或磁隧道结装置的磁感测装置（12） ，以创建紧凑的集成装置，其中环境磁场的变化表示为从MOD发出的光束强度的变化。 使用MOD（10），可以通过例如通过自由空间和/或通过光纤的某些介质（34）通过非常大的距离的光波来传输磁场相关信息。

公开(公告)号：US07440479B2

公开(公告)日：2008-10-21

申请号：US10488570

申请日：2002-09-05

Applicant: Arto V Nurmikko

Inventor： Arto V Nurmikko

IPC: H01S3/30 ,  H01S3/00

CPC classification number: G01R33/093 ,  B82Y25/00 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/0607 ,  H01S5/183

Abstract: A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

Abstract translation: 磁光电装置MOD（10）包括与诸如LED或激光二极管的半导体光发射器（14）组合的诸如磁阻器件或磁隧道结装置的磁感测装置（12） ，以创建紧凑的集成装置，其中环境磁场的变化表示为从MOD发出的光束强度的变化。 使用MOD（10），可以通过例如通过自由空间和/或通过光纤的某些介质（34）通过非常大的距离的光波来传输磁场相关信息。

公开(公告)号：US07624640B2

公开(公告)日：2009-12-01

申请号：US11324866

申请日：2006-01-04

Applicant: Humphrey J. Maris ,  Arto V Nurmikko

Inventor： Humphrey J. Maris ,  Arto V Nurmikko

IPC: G01N29/06 ,  G01N29/24

CPC classification number: G01N29/075 ,  A61B5/0097 ,  A61B8/00 ,  G01N29/0681 ,  G01N29/11 ,  G01N29/221 ,  G01N29/2418 ,  G01N2291/02827 ,  G01N2291/02854 ,  G01N2291/0423 ,  G01N2291/0427 ,  G01S15/8965

Abstract: An opto-acoustic transducer assembly includes a substrate; at least one layer of opto-acoustic material coupled to a surface of the substrate, where the at least one layer of opto-acoustic material generates sound waves when struck by pulses of pump light; and an acoustic lens configured to focus sound waves generated by the at least one layer of opto-acoustic material towards a sample. The acoustic lens is further configured to collect sound waves returning from the sample and to direct the returning sound waves to the at least one layer of opto-acoustic material. The at least one layer of opto-acoustic material is responsive to the returning sound waves for having at least one optical property thereof changed, where the change is detectable from a change in a characteristic of reflected pulses of probe light that are time delayed with respect to the pulses of pump light.

Abstract translation: 光声换能器组件包括基底; 耦合到所述衬底的表面的至少一层光声材料层，其中所述至少一层光声材料层在被泵浦光脉冲击中时产生声波; 以及声透镜，被配置为将由所述至少一层光声材料层产生的声波聚焦到样品。 声透镜还被配置为收集从样品返回的声波并将返回的声波引导到至少一层光声材料层。 所述至少一层光声材料响应于返回的声波，以使其至少一个光学特性发生变化，其中可以根据相对于时间延迟的探测光的反射脉冲的特性的变化来检测该变化 到泵浦光的脉冲。