公开(公告)号：US20130256674A1

公开(公告)日：2013-10-03

申请号：US13905073

申请日：2013-05-29

Applicant: Au Optronics Corporation

Inventor： Chun-Yen Liu ,  Cheng-Chieh Tseng ,  Chia-Yuan Yeh

IPC: H01L33/00

CPC classification number: H01L27/1255 ,  H01L27/1214 ,  H01L27/3265 ,  H01L33/0041

Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

Abstract translation: 一种像素结构，包括具有至少一个源极区和至少一个漏极区的半导体层; 覆盖半导体层的第一绝缘层; 在所述第一绝缘层上的第一导电层，并且包括至少一个栅极; 覆盖所述第一导电层的第二绝缘层; 在所述第二绝缘层上的第二导电层，并且包括至少一个源电极，至少一个漏电极和至少一个底电极，所述源极区，所述源电极，所述漏极区，所述漏电极和所述栅至少形成 一个薄膜晶体管; 覆盖所述第二导电层的第三绝缘层; 在所述第三绝缘层上的第三导电层，并且包括至少一个顶部电极，所述顶部电极和所述底部电极形成至少一个电容器; 以及电连接到所述薄膜晶体管的像素电极。

公开(公告)号：US08766267B2

公开(公告)日：2014-07-01

申请号：US13905073

申请日：2013-05-29

Applicant: Au Optronics Corporation

Inventor： Chun-Yen Liu ,  Cheng-Chieh Tseng ,  Chia-Yuan Yeh

IPC: H01L33/36

CPC classification number: H01L27/1255 ,  H01L27/1214 ,  H01L27/3265 ,  H01L33/0041

Abstract: A pixel structure including a semiconductor layer having at least one source region and at least one drain region; a first insulating layer covering the semiconductor layer; a first conductive layer on the first insulating layer and including at least one gate; a second insulating layer covering the first conductive layer; a second conductive layer on the second insulating layer and including at least one source electrode, at least one drain electrode and at least one bottom electrode, the source region, the source electrode, the drain region, the drain electrode and the gate forming at least one thin film transistor; a third insulating layer covering the second conductive layer; a third conductive layer on the third insulating layer and including at least one top electrode, the top electrode and the bottom electrode forming at least one capacitor; and a pixel electrode electrically connected to the thin film transistor.

Abstract translation: 一种像素结构，包括具有至少一个源极区和至少一个漏极区的半导体层; 覆盖半导体层的第一绝缘层; 在所述第一绝缘层上的第一导电层，并且包括至少一个栅极; 覆盖所述第一导电层的第二绝缘层; 在所述第二绝缘层上的第二导电层，并且包括至少一个源电极，至少一个漏电极和至少一个底电极，所述源极区，所述源电极，所述漏极区，所述漏电极和所述栅至少形成 一个薄膜晶体管; 覆盖所述第二导电层的第三绝缘层; 在所述第三绝缘层上的第三导电层，并且包括至少一个顶部电极，所述顶部电极和所述底部电极形成至少一个电容器; 以及电连接到薄膜晶体管的像素电极。