公开(公告)号：US08608376B2

公开(公告)日：2013-12-17

申请号：US13134012

申请日：2011-05-26

申请人： Avinash S. Kashyap ,  H. Alan Mantooth

发明人： Avinash S. Kashyap ,  H. Alan Mantooth

IPC分类号： G01K7/01

CPC分类号： G01R31/2874 ,  G01R31/2862

摘要： A method for modeling the performance of a laterally diffused metal oxide semiconductor (LDMOS) device across a wide temperature range is disclosed. The method comprises the steps of positioning the device in an environment chamber operable to create a plurality of environment temperatures; connecting the pins of the device to a measurement system operable to measure at least one device characteristic; operating the environment chamber to set a series of four environment temperatures, acquiring a value of the device characteristic from the measurement system at each temperature, and extracting a temperature parameter set based on the value of the device characteristic at each temperature, then generating a temperature-scaling model for the device.

摘要翻译： 公开了一种用于在宽的温度范围内对横向扩散的金属氧化物半导体（LDMOS）器件的性能进行建模的方法。 该方法包括将设备定位在可操作以产生多个环境温度的环境室中的步骤; 将所述设备的引脚连接到可操作以测量至少一个设备特性的测量系统; 操作环境室以设定一系列四个环境温度，在每个温度下从测量系统获取设备特性的值，并且基于每个温度下的设备特性值提取设置的温度参数，然后产生温度 该设备的缩放模型。

公开(公告)号：US20110292964A1

公开(公告)日：2011-12-01

申请号：US13134012

申请日：2011-05-26

申请人： Avinash S. Kashyap ,  H. Alan Mantooth

发明人： Avinash S. Kashyap ,  H. Alan Mantooth

IPC分类号： G01K3/00

CPC分类号： G01R31/2874 ,  G01R31/2862

摘要： A method for modeling the performance of a laterally diffused metal oxide semiconductor (LDMOS) device across a wide temperature range is disclosed. The method comprises the steps of positioning the device in an environment chamber operable to create a plurality of environment temperatures; connecting the pins of the device to a measurement system operable to measure at least one device characteristic; operating the environment chamber to set a series of four environment temperatures, acquiring a value of the device characteristic from the measurement system at each temperature, and extracting a temperature parameter set based on the value of the device characteristic at each temperature, then generating a temperature-scaling model for the device.

摘要翻译： 公开了一种用于在宽的温度范围内对横向扩散的金属氧化物半导体（LDMOS）器件的性能进行建模的方法。 该方法包括将设备定位在可操作以产生多个环境温度的环境室中的步骤; 将所述设备的引脚连接到可操作以测量至少一个设备特性的测量系统; 操作环境室以设定一系列四个环境温度，在每个温度下从测量系统获取设备特性的值，并且基于每个温度下的设备特性值提取设置的温度参数，然后产生温度 该设备的缩放模型。