公开(公告)号：US20030049571A1

公开(公告)日：2003-03-13

申请号：US10267757

申请日：2002-10-09

Applicant: Axcelis Technologies, Inc.

Inventor： John S. Hallock ,  Robert D. Mohondro

IPC: G03C005/00

CPC classification number: G03F7/405 ,  G03F7/40 ,  Y10S430/143 ,  Y10S430/168

Abstract: A process for reducing roughness from a surface of a patterned photoresist. The process includes exposing a substrate having the patterned photoresist thereon to a vapor, wherein the vapor penetrates into and/or reacts with the surface of the photoresist. The substrate having the patterned photoresist thereon is then heated to a temperature and for a time sufficient to cause the surface of the photoresist to flow and/or react with the vapor wherein the surface roughness decreases. Optionally, the substrate is exposed to radiation during the process to increase the etch resistance of the photoresist and/or facilitate the reaction of the vapor with the surface of the photoresist.