Multiple arc chamber source
    1.
    发明授权

    公开(公告)号:US11183365B2

    公开(公告)日:2021-11-23

    申请号:US16850066

    申请日:2020-04-16

    Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

    MULTIPLE ARC CHAMBER SOURCE
    2.
    发明申请

    公开(公告)号:US20200335302A1

    公开(公告)日:2020-10-22

    申请号:US16850066

    申请日:2020-04-16

    Abstract: An ion source for an ion implantation system has a plurality of arc chambers. The ion source forms an ion beam from a respective one of the plurality of arc chambers based on a position of the respective one of the plurality of arc chambers with respect to a beamline. The arc chambers are coupled to a carrousel that translates or rotates the respective one of the plurality of arc chambers to a beamline position associated with the beamline. One or more of the plurality of arc chambers can have at least one unique feature, or two or more of the plurality of arc chambers can be generally identical to one another.

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