公开(公告)号：US10714296B2

公开(公告)日：2020-07-14

申请号：US16217664

申请日：2018-12-12

Applicant: Axcelis Technologies Inc.

Inventor： Patrick T. Heres ,  Denis A. Robitaille

IPC: H01J27/02 ,  H01J37/08 ,  H01J37/317 ,  H01J37/09

Abstract: An ion implantation system including an ion source for use in creating an ion beam is disclosed. The ion source has an ion source arc chamber housing that confines a high density concentration of ions within the chamber housing. An extraction member defining an appropriately configured extraction aperture allows ions to exit the source arc chamber. In a preferred embodiment, the extraction member defines a tailored extraction aperture shape for modifying an ion beam profile and producing a substantially uniform beam current across a dimension of the ion beam. The extraction aperture member defines an aperture in the form of an elongated slit having a width that varies, with wide ends and a narrow middle. The midsection of the extraction aperture has a narrower width than the opposite end sections. The tailored shape of the extraction aperture includes a central portion having a first width dimension, and first and second distal portions extending from opposite sides of the central portion, the opposed distal portions having a second width dimension that is greater than the first width dimension of the central portion.