公开(公告)号：US20180151764A1

公开(公告)日：2018-05-31

申请号：US15799138

申请日：2017-10-31

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Pierre-Alain S. AUROUX ,  Louise C. SENGUPTA ,  John E. KING ,  Idan MANDELBAUM ,  James A. STOBIE ,  Laura A. SWAFFORD ,  Chen J. ZHANG ,  Christopher S. BADORREK ,  Michael J. BOWERS, II ,  Myeongseob KIM ,  Tadd C. KIPPENY ,  Don A. HARRIS

IPC: H01L31/0352 ,  H01L27/146 ,  H01L27/30

CPC classification number: H01L31/035218 ,  B82Y20/00 ,  H01L27/14652 ,  H01L27/307

Abstract: A photon-activated quantum dot capacitor and method of fabrication. A photon-activated quantum dot capacitor photodetector having a read only integrated circuit; and a photon-activated quantum dot capacitor chip hybridized with the read only integrated circuit, wherein said photon-activated quantum dot capacitor chip comprises colloidal quantum dots that detect photons as a change in a dielectric constant of the colloidal quantum dots of the photon-activated quantum dot capacitor chip, including the further implementation of a photodetector.