公开(公告)号：US12125930B2

公开(公告)日：2024-10-22

申请号：US18024611

申请日：2021-09-16

Applicant: LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

Inventor： Zifeng Li ,  Zhao Wu ,  Chen Xu

IPC: H01L31/0725 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/0725 ,  H01L31/02164 ,  H01L31/022441 ,  H01L31/0288 ,  H01L31/035272 ,  H01L31/1868 ,  H01L31/02168 ,  H01L31/035218

Abstract: The laminated A tandem solar cell includes a bottom cell and a top cell located on the bottom cell, wherein the bottom cell includes a first doping portion and a second doping portion, the first doping portion and the second doping portion form at least one PN junction, majority carriers in the first doping portion are a first type of carrier, and majority carriers in the second doping portion are a second type of carrier; the bottom cell is provided with a first electrode hole and a second electrode hole which penetrate the bottom cell, a first electrode is formed in the first electrode hole, and a second electrode is formed in the second electrode hole; the first electrode is in contact with the first doping portion; and the second electrode is in contact with the second doping portion.

公开(公告)号：US12119362B2

公开(公告)日：2024-10-15

申请号：US17185129

申请日：2021-02-25

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Sanshiro Shishido ,  Shinichi Machida ,  Takeyoshi Tokuhara ,  Katsuya Nozawa

IPC: H01L27/14 ,  G02B5/20 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0384 ,  H01L27/142 ,  H01L31/0256

CPC classification number: H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14667 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/03845 ,  H01L27/142 ,  H01L27/14643 ,  H01L2031/0344

Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.

公开(公告)号：US20240113240A1

公开(公告)日：2024-04-04

申请号：US18374687

申请日：2023-09-29

Applicant: Equal 1 Laboratories Ireland Limited

Inventor： Dirk Robert Walter Leipold ,  Elena Blokhina ,  Andrii Sokolov

IPC: H01L31/0352 ,  G06N10/40 ,  H01L29/66

CPC classification number: H01L31/035218 ,  G06N10/40 ,  H01L29/66439 ,  H01L29/66977

Abstract: A novel and useful mechanism of improving the controllability of the electrostatic potential profile and electric field between barrier/control gates separating quantum dots (QD) in a quantum dot array (QDA) and creating elongated double quantum dot array 2D structures each having capability for a continuous tunneling within the array structure. Plunger gates implemented as blind contacts improve electric field control between barrier gates in a quantum dot array. Blind contacts create a dedicated control potential under multiple blind contact electrodes placed on a metal layer of a standard FDSOI process. They function to control potential well depths independently for neighboring quantum dots. Two or more coupled quantum dots within one elongated active area enables interconnection of neighboring quantum dot chains using a conductive semiconductor well. The blind contacts enable the implementation of charge sensors, precise precharge transistors, and linear and 2D quantum dot array.

公开(公告)号：US11929443B1

公开(公告)日：2024-03-12

申请号：US16228193

申请日：2018-12-20

Applicant: US Department of Energy

Inventor： Victor Klimov

IPC: H01L31/055 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/072

CPC classification number: H01L31/035218 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0322 ,  H01L31/055 ,  H01L31/072

Abstract: Luminescent solar concentrators (LSCs) based on engineered quantum dots (QDs) are disclosed that include at least one lower band-gap energy LSC layer and at least one higher band-gap energy LSC layer. The higher band-gap energy LSC layer has a higher internal quantum efficiency (IQE) than the lower band-gap energy LSC layer. The lower band-gap energy LSC layer may broadly absorb the remainder of the solar spectrum that is not absorbed by previous layers. An external optical efficiency (EQE) of at least 6%, and in some cases, more than 10%, may be achieved by such LSCs.

公开(公告)号：US20240046133A1

公开(公告)日：2024-02-08

申请号：US18258691

申请日：2022-05-27

Applicant: INDIAN INSTITUTE OF SCIENCE EDUCATION AND RESEARCH

Inventor： Shouvik DATTA ,  Amit BHUNIA ,  Mohamed HENINI ,  Maryam Al HUWAYZ ,  Mohit Kumar SINGH

IPC: G06N10/40 ,  H03K17/92

CPC classification number: G06N10/40 ,  H03K17/92 ,  H01L31/035218

Abstract: The present disclosure provides method and system, which use multiple of excitonic BEC(s) and/or excitonic matter-wave(s) and/or excitonic superfluid(s) as a platform to generate multiple (from a few to even millions or more) long-lived Qubits in any conceivable multi-dimensional hybrid nano structure(s), mostly using semiconductor material(s) and/or device structure(s) at any temperature in between 0-500K, and that can sustain any quantum coherence for a much longer time scales of microseconds or milliseconds or even more, but not limited to these time scales for any conceivable faster device operation(s) as well. The macroscopic quantum states of the generated Qubits are easily controllable with applied voltage(s) (dc and/or ac) and/or electrical power, and/or light beam(s), and are easily integrated with semiconductor fabrication techniques for quicker and wider adaptation of Quantum technologies.

公开(公告)号：US11877460B2

公开(公告)日：2024-01-16

申请号：US17688894

申请日：2022-03-07

Applicant: SN DISPLAY CO., LTD.

Inventor： Tae-Woo Lee ,  Sanghyuk Im ,  Himchan Cho ,  Young-Hoon Kim

IPC: C09K11/06 ,  H01B1/12 ,  H01G9/20 ,  H10K85/30 ,  H10K85/10 ,  C09K11/00 ,  C09K11/02 ,  C09K11/66 ,  H01L21/02 ,  H01L31/0264 ,  H01L31/0352 ,  H01L31/18 ,  H10K30/40 ,  H10K30/50 ,  H10K30/86 ,  H10K71/00 ,  H10K85/50 ,  C09D127/18 ,  H10K50/18 ,  H10K50/11 ,  H10K85/60 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H10K50/11 ,  C09D127/18 ,  C09K11/00 ,  C09K11/025 ,  C09K11/06 ,  C09K11/664 ,  C09K11/665 ,  H01B1/125 ,  H01B1/127 ,  H01G9/2009 ,  H01L21/02197 ,  H01L31/0264 ,  H01L31/035218 ,  H01L31/18 ,  H10K30/40 ,  H10K30/50 ,  H10K30/86 ,  H10K50/18 ,  H10K71/00 ,  H10K85/111 ,  H10K85/141 ,  H10K85/30 ,  H10K85/50 ,  B82Y30/00 ,  B82Y40/00 ,  C09K2211/18 ,  C09K2211/181 ,  C09K2211/188 ,  H10K85/60 ,  Y02E10/549

Abstract: Provided are a perovskite optoelectronic device containing an exciton buffer layer, and a method for manufacturing the same. The optoelectronic device of the present invention comprises: an exciton buffer layer in which a first electrode, a conductive layer disposed on the first electrode and comprising a conductive material, and a surface buffer layer containing fluorine-based material having lower surface energy than the conductive material are sequentially deposited; a photoactive layer disposed on the exciton buffer layer and containing a perovskite photoactive layer; and a second electrode disposed on the photoactive layer. Accordingly, a perovskite is formed with a combined FCC and BSS crystal structure in a nanoparticle photoactive layer. The present invention can also form a lamellar or layered structure in which an organic plane and an inorganic plane are alternatively deposited; and an exciton can be bound by the inorganic plane, thereby being capable of expressing high color purity.

公开(公告)号：US11869918B2

公开(公告)日：2024-01-09

申请号：US18082499

申请日：2022-12-15

Applicant: Oregon Dental, Inc.

Inventor： Leigh E. Colby

IPC: G01T1/208 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/028 ,  B82Y15/00 ,  B82Y20/00

CPC classification number: H01L27/14663 ,  B82Y15/00 ,  G01T1/208 ,  H01L27/14629 ,  H01L31/028 ,  H01L31/035218 ,  B82Y20/00 ,  Y10S977/774 ,  Y10S977/954

Abstract: A digital quantum dot radiographic detection system described herein includes: a scintillation subsystem 202 and a semiconductor light detection subsystem 200, 200′ (including a plurality of quantum dot image sensors 200a, 200b). In a first preferred digital quantum dot radiographic detection system, the plurality of quantum dot image sensors 200 is in substantially direct contact with the scintillation subsystem 202. In a second preferred digital quantum dot radiographic detection system, the scintillation subsystem has a plurality of discrete scintillation packets 212a, 212b, at least one of the discrete scintillation packets communicating with at least one of the quantum dot image sensors. The quantum dot image sensors 200 may be associated with semiconductor substrate 210 made from materials such as silicon (and variations thereof) or graphene. An optically opaque layer 220 is preferably positioned between the discrete scintillation packets, 212a, 212b.

公开(公告)号：US20230411544A1

公开(公告)日：2023-12-21

申请号：US18206342

申请日：2023-06-06

Applicant: NEW JERSEY INSTITUTE OF TECHNOLOGY

Inventor： Dong Kyun Ko ,  Shihab Bin Hafiz ,  Mohammad Mostafa Al Mahfuz

IPC: H01L31/0352 ,  H01L31/0224 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: H01L31/035218 ,  H01L31/022408 ,  B82Y20/00 ,  B82Y30/00

Abstract: A binary CQD device is disclosed, which could include a MWIR-absorbing intraband CQD with another type of CQD. The binary CQD device could include a MWIR-absorbing intraband silver selenide (Ag2Se) CQD with a lead sulfide (PbS) CQD.

公开(公告)号：US11795394B2

公开(公告)日：2023-10-24

申请号：US17524347

申请日：2021-11-11

Applicant: TCL TECHNOLOGY GROUP CORPORATION

Inventor： Lei Qian ,  Yixing Yang ,  Zheng Liu

IPC: C09K11/88 ,  H10K50/115 ,  C09K11/56 ,  B82Y30/00 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K85/10 ,  H10K85/60 ,  H10K102/00 ,  H10K102/10 ,  B82Y20/00 ,  B82Y40/00 ,  H01L31/0352

CPC classification number: C09K11/883 ,  C09K11/565 ,  H10K50/115 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/035218 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K85/111 ,  H10K85/1135 ,  H10K85/146 ,  H10K85/626 ,  H10K85/633 ,  H10K85/6572 ,  H10K2102/00 ,  H10K2102/103 ,  H10K2102/321

Abstract: A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The at least two structural units include a type A1 structural unit and a type A2 structural unit. The type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface. The two types of QD structural units are arranged alternately along the radial direction, and the energy levels in adjacent QD structural units having gradient alloy composition structures are continuous.

公开(公告)号：US11791432B2

公开(公告)日：2023-10-17

申请号：US17182954

申请日：2021-02-23

Applicant: W&WSens Devices, Inc.

Inventor： Shih-Yuan Wang ,  Shih-Ping Wang

IPC: H01L27/146 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/18 ,  H01L27/144 ,  H04B10/69 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/103 ,  H01L31/028 ,  H01L31/107 ,  H04B10/25 ,  H04B10/40 ,  H04B10/80 ,  G02B1/00 ,  G02B6/42 ,  H01L31/077 ,  H01L31/036 ,  H01L31/075 ,  H01L31/105

CPC classification number: H01L27/14607 ,  G02B1/002 ,  G02B6/4204 ,  G02B6/428 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14625 ,  H01L31/02 ,  H01L31/028 ,  H01L31/02016 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/02325 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/036 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/075 ,  H01L31/077 ,  H01L31/09 ,  H01L31/103 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/1808 ,  H04B10/25 ,  H04B10/40 ,  H04B10/691 ,  H04B10/6971 ,  H04B10/801 ,  G02B1/005 ,  Y02E10/547 ,  Y02P70/50

Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.