公开(公告)号：US20230326759A1

公开(公告)日：2023-10-12

申请号：US18042315

申请日：2021-08-18

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Andreas KLIPP ,  Sabine FRISCHHUT ,  Chih Hui LO ,  Mei Chin SHEN

IPC: H01L21/306

CPC classification number: H01L21/30608

Abstract: Disclosed herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a layer including silicon, the composition including:



(a) 5 to 15% by weight of an oxidizing agent;
(b) 5 to 20% by weight of an etchant comprising a source of fluoride ions;
(c) 0.001 to 3% by weight of a first selectivity enhancer of formula S1
and
(d) water.