公开(公告)号：US20230326759A1

公开(公告)日：2023-10-12

申请号：US18042315

申请日：2021-08-18

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Andreas KLIPP ,  Sabine FRISCHHUT ,  Chih Hui LO ,  Mei Chin SHEN

IPC: H01L21/306

CPC classification number: H01L21/30608

Abstract: Disclosed herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a layer including silicon, the composition including:



(a) 5 to 15% by weight of an oxidizing agent;
(b) 5 to 20% by weight of an etchant comprising a source of fluoride ions;
(c) 0.001 to 3% by weight of a first selectivity enhancer of formula S1
and
(d) water.

公开(公告)号：US20230274930A1

公开(公告)日：2023-08-31

申请号：US18004348

申请日：2021-06-29

Applicant: BASF SE

Inventor： Chi Yueh KAO ,  Mei Chin SHEN ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Daniel LOEFFLER

IPC: H01L21/02 ,  G03F7/40 ,  C11D11/00 ,  C11D7/50 ,  C11D3/37

CPC classification number: H01L21/0206 ,  C11D3/3734 ,  C11D3/3738 ,  C11D7/5022 ,  C11D7/5027 ,  C11D11/0047 ,  G03F7/40

Abstract: Described herein is a non-aqueous composition including

(a) an organic solvent; and
(b) at least one additive of formulae I or II










where

R1 is H
R2 is selected from the group consisting of H, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy,
R3 is selected from the group consisting of R2,
R4 is selected from the group consisting of C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy,
R10, R12 are independently selected from the group consisting of C1 to C19 alkyl and C1 to C10 alkoxy,
m is 1, 2 or 3, and
n is 0 or an integer from 1 to 100.

公开(公告)号：US20230235252A1

公开(公告)日：2023-07-27

申请号：US17999734

申请日：2021-05-12

Applicant: BASF SE

Inventor： Chi Yueh KAO ,  Mei Chin SHEN ,  Daniel LOEFFLER ,  Andreas KLIPP ,  Haci Osman GUEVENC

IPC: C11D7/04 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02

CPC classification number: C11D7/04 ,  C11D7/5022 ,  C11D11/0047 ,  H01L21/02063

Abstract: Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C1 to C4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.

公开(公告)号：US20200255772A1

公开(公告)日：2020-08-13

申请号：US16756303

申请日：2018-10-29

Applicant: BASF SE

Inventor： Daniel LOEFFLER ,  Mei Chin SHEN ,  Sheng Hsuan WEI ,  Frank PIRRUNG ,  Lothar ENGELBRECHT ,  Yeni BURK ,  Andreas KLIPP ,  Marcel BRILL ,  Szilard CSIHONY

IPC: C11D3/37 ,  G03F7/40 ,  C11D7/50 ,  H01L21/02

Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.