公开(公告)号：US10344381B2

公开(公告)日：2019-07-09

申请号：US15325840

申请日：2015-07-22

Applicant: BASF SE

Inventor： Julia Strautmann ,  Rocco Paciello ,  Thomas Schaub ,  Felix Eickemeyer ,  Daniel Loeffler ,  Hagen Wilmer ,  Udo Radius ,  Johannes Berthel ,  Florian Hering

IPC: C23C16/455 ,  C23C16/18 ,  C07F15/04 ,  C07F15/06 ,  C30B25/10 ,  C30B25/08

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In detail the present invention relates a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state (Fig.) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1 and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, R2, R3, R5 and R6 are independent of each other hydrogen, an alkyl group, an aryl group or a trialkylsilyl group, n is an integer from 1 to 3, M is Ni or Co, X is a ligand which coordinates M, and m is an integer from 0 to 4.