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公开(公告)号：US20210111300A1
公开(公告)日：2021-04-15
申请号：US17066786
申请日：2020-10-09
发明人： Robel FESSEHATZION , Ben HICKEY , Jochen TITUS , Dmitry POPLAVSKYY , Neil MACKIE
摘要： A thin film deposition system and method for forming photovoltaic cells, the system including a first deposition module including a titanium sputtering target and configured to deposit a titanium precursor layer of a diffusion barrier on the substrate, as the substrate moves through the first deposition module; a second deposition module configured to deposit a first electrode onto the diffusion barrier, as the substrate moves through the second deposition module; and a first connection unit configured to nitride at least a portion of the titanium precursor layer of the diffusion barrier, while the substrate moves though the first connection unit from the first deposition module to the second deposition module.
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2.发明申请公开(公告)号：US20180158973A1
公开(公告)日：2018-06-07
申请号：US15403434
申请日：2017-01-11
发明人： Rouin FARSHCHI , Neil MACKIE
IPC分类号： H01L31/032 , H01L31/0224 , H01L31/18
CPC分类号： C23C14/0623 , C23C14/0057 , C23C14/541 , C23C14/562 , C23C14/568 , H01J37/3473 , H01L31/022425 , H01L31/0324 , H01L31/18 , Y02E10/50 , Y02P70/521
摘要： A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least one chalcogen to deposit an alloy of silver, copper, indium, gallium, and at least one chalcogen. A film of the alloy can be deposited on a continuously moving substrate with a high throughput to form a p-type semiconductor absorber layer of a photovoltaic cell.
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