公开(公告)号：US11834738B2

公开(公告)日：2023-12-05

申请号：US17956281

申请日：2022-09-29

申请人： Samsung Electronics Co., Ltd.

发明人： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeong-heon Park ,  Junho Jeong

IPC分类号： C23C14/54 ,  C23C14/00 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

CPC分类号： C23C14/541 ,  C23C14/0057 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

摘要： A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US20180350922A1

公开(公告)日：2018-12-06

申请号：US15988883

申请日：2018-05-24

申请人： North Carolina State University

发明人： Edward Sachet ,  Christopher Shelton ,  Jon-Paul Maria ,  Kyle Patrick Kelley ,  Evan Lars Runnerstrom

IPC分类号： H01L29/267 ,  C23C14/08 ,  C23C14/35 ,  H01L21/02 ,  H01L21/477

CPC分类号： H01L29/267 ,  C23C14/0042 ,  C23C14/0057 ,  C23C14/086 ,  C23C14/345 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/352 ,  C23C14/548 ,  H01L21/02266 ,  H01L21/477 ,  H01L29/45 ,  H01L29/458 ,  H01L29/7869 ,  H01L31/022466

摘要： A method of forming a metal oxide includes providing a reactive deposition atmosphere having an oxygen concentration of greater than about 20 percent in a chamber including a substrate therein. A pulsed DC signal is applied to a sputtering target comprising a metal, to sputter metal particles therefrom. A doping element may be supplied from a doping source (such as an alloyed metal target) in the reaction chamber. An electrically conductive metal oxide film comprising an oxide of the metal is deposited on the substrate responsive to a reaction between the metal particles and the reactive deposition atmosphere. Related devices are also discussed.

公开(公告)号：US20180158973A1

公开(公告)日：2018-06-07

申请号：US15403434

申请日：2017-01-11

申请人： BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD

发明人： Rouin FARSHCHI ,  Neil MACKIE

IPC分类号： H01L31/032 ,  H01L31/0224 ,  H01L31/18

CPC分类号： C23C14/0623 ,  C23C14/0057 ,  C23C14/541 ,  C23C14/562 ,  C23C14/568 ,  H01J37/3473 ,  H01L31/022425 ,  H01L31/0324 ,  H01L31/18 ,  Y02E10/50 ,  Y02P70/521

摘要： A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least one chalcogen to deposit an alloy of silver, copper, indium, gallium, and at least one chalcogen. A film of the alloy can be deposited on a continuously moving substrate with a high throughput to form a p-type semiconductor absorber layer of a photovoltaic cell.

公开(公告)号：US20170372897A1

公开(公告)日：2017-12-28

申请号：US15543141

申请日：2015-12-17

申请人： NUVOSON, INC.

发明人： Dennis R. HOLLARS ,  Puthur PAULSON ,  Don PERSON ,  Arthur C. WALL

IPC分类号： H01L21/02 ,  H01L31/0749 ,  H01L31/032 ,  C23C14/58 ,  C23C14/34 ,  C23C14/06 ,  C23C14/00 ,  H01L31/18 ,  C22C29/00

CPC分类号： H01L21/02568 ,  C22C29/00 ,  C22C32/0089 ,  C23C14/0057 ,  C23C14/0623 ,  C23C14/0694 ,  C23C14/3414 ,  C23C14/3464 ,  C23C14/5806 ,  C23C14/5866 ,  H01L21/02266 ,  H01L21/02417 ,  H01L21/02485 ,  H01L21/02614 ,  H01L21/02631 ,  H01L31/02008 ,  H01L31/0322 ,  H01L31/0323 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/188 ,  H01L45/141 ,  H01L45/16 ,  H01L45/1625 ,  Y02E10/541

摘要： The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s). The chalcogenide semiconductors are useful in microelectronic devices, including solar cells.

公开(公告)号：US09169548B1

公开(公告)日：2015-10-27

申请号：US12907762

申请日：2010-10-19

申请人： John Corson ,  Alex Austin ,  Ron Rulkens ,  Jochen Titus ,  Robert Tas ,  Paul Shufflebotham ,  Daniel R. Juliano ,  Neil Mackie

发明人： John Corson ,  Alex Austin ,  Ron Rulkens ,  Jochen Titus ,  Robert Tas ,  Paul Shufflebotham ,  Daniel R. Juliano ,  Neil Mackie

IPC分类号： C23C14/14 ,  C23C14/06 ,  C23C14/56 ,  C23C14/34

CPC分类号： C23C14/0623 ,  C23C14/0057 ,  C23C14/14 ,  C23C14/3414 ,  C23C14/3464 ,  C23C14/562 ,  C23C14/568 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/0322 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

摘要： A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)≦0.3, and where the content is measured in atomic percent.

摘要翻译： 光伏电池包括p型铜铟镓硒吸收层，其中p型铜铟镓硒吸收层的第一部分中的Cu，In和Ga的含量满足方程式Cu /(In+Ga)≦̸0.3，其中内容以原子百分比测量。

公开(公告)号：US08936702B2

公开(公告)日：2015-01-20

申请号：US11370269

申请日：2006-03-07

申请人： Allen McTeer

发明人： Allen McTeer

IPC分类号： C23C14/00 ,  C23C14/32 ,  C23C14/06 ,  C23C14/34

CPC分类号： C23C14/0042 ,  C23C14/0057 ,  C23C14/0094 ,  C23C14/0652 ,  C23C14/3485

摘要： There is provided a system and method for sputtering a tensile silicon nitride film. More specifically, in one embodiment, there is provided a method comprising introducing nitrogen gas into a process chamber, wherein the process chamber includes a target comprising silicon, placing the process chamber into a transition region between a metallic region and a poisoned region, and applying a voltage to the target.

摘要翻译： 提供了一种用于溅射拉伸氮化硅膜的系统和方法。 更具体地，在一个实施例中，提供了一种方法，其包括将氮气引入处理室，其中处理室包括包含硅的靶，将处理室放置在金属区域和中毒区域之间的过渡区域中，并施加 对目标的电压。

公开(公告)号：US20140186640A1

公开(公告)日：2014-07-03

申请号：US13727747

申请日：2012-12-27

申请人： METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE

发明人： SUNG-MAO CHIU ,  CHIA-HUNG HOANG ,  KUO-YUAN YANG ,  MEI-JUNG HO

IPC分类号： C09D5/00

CPC分类号： C03C17/3452 ,  C03C17/2456 ,  C03C17/3417 ,  C03C2217/241 ,  C23C14/0057 ,  C23C14/024 ,  C23C14/06 ,  C23C14/08 ,  Y10T428/31678

摘要： The present invention provides an anti-adhesion transparent thin film, which uses physical vapor deposition to deposit a transparent thin film on the surface of a substrate. The transparent film has the characteristics of high light perviousness, good hardness, excellent acid resistivity, and superior anti-adhesion capability. Furthermore, an oxide layer can be formed between the surface of the substrate and the transparent thin film for improving the stability of the transparent thin film adhering to the surface of the substrate. In addition, the process temperature according to the present invention is less than 100; and the transparent thin film according to the present invention requires no metal- or fluorine-containing precursor. Thereby, the costs for industrial applications can be reduced substantially. It is also suitable for the substrates with less temperature tolerance such as metal, nonmetal, and polymer-like substrates. Hence, the applicable industries are extensive.

摘要翻译： 本发明提供一种使用物理气相沉积在基板表面上沉积透明薄膜的防粘附透明薄膜。 该透明膜具有透光性好，硬度好，耐酸性好，抗粘附性优异的特点。 此外，可以在衬底的表面和透明薄膜之间形成氧化物层，以提高粘附在衬底表面上的透明薄膜的稳定性。 此外，根据本发明的工艺温度小于100℃; 并且根据本发明的透明薄膜不需要含金属或含氟的前体。 因此，可以大大降低工业应用的成本。 它也适用于耐温性较差的基材，如金属，非金属和聚合物样基材。 因此，适用行业广泛。

公开(公告)号：US20140037943A1

公开(公告)日：2014-02-06

申请号：US13628491

申请日：2012-09-27

申请人： DA-HUA CAO

发明人： DA-HUA CAO

IPC分类号： C23C14/35 ,  C23C14/16 ,  B32B15/04

CPC分类号： C23C14/0641 ,  C23C14/0057 ,  C23C14/0084 ,  C23C14/025 ,  C23C14/027 ,  Y10T428/265

摘要： A coated article includes a metal substrate, a TiSiN layer formed on the metal substrate, and a TiN layer formed on the TiSiN layer. The TiSiN layer consists essentially of elemental Ti, elemental Si, and elemental N in non-homogenous deposition. The elemental Si within the TiSiN layer has a mass percentage gradually decreasing from the bottom of the TiSiN layer near the substrate to the top of the TiSiN layer away from the substrate. The elemental N has a mass percentage gradually increasing from the bottom of the TiSiN layer near the substrate to the top of the TiSiN layer away from the substrate. The TiN layer consists essentially of elemental Ti and elemental N. A method for making the coated article is also described.

摘要翻译： 涂覆制品包括金属基板，形成在金属基板上的TiSiN层和形成在TiSiN层上的TiN层。 TiSiN层基本上由不均匀沉积中的元素Ti，元素Si和元素N组成。 TiSiN层内的元素Si的质量百分比从衬底附近的TiSiN层的底部到离开衬底的TiSiN层的顶部逐渐减小。 元素N的质量百分比从衬底附近的TiSiN层的底部到离开衬底的TiSiN层的顶部逐渐增加。 TiN层基本上由元素Ti和元素N组成。还描述了制备涂层制品的方法。

公开(公告)号：US20130334688A1

公开(公告)日：2013-12-19

申请号：US14002589

申请日：2011-03-25

申请人： Mingjie Zhou ,  Ping Wang ,  Jixing Chen ,  Hui Huang

发明人： Mingjie Zhou ,  Ping Wang ,  Jixing Chen ,  Hui Huang

IPC分类号： H01B1/08 ,  H01L21/02 ,  H01L23/48

CPC分类号： H01B1/08 ,  C04B35/453 ,  C04B2235/3217 ,  C04B2235/3286 ,  C04B2235/3418 ,  C23C14/0057 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/35 ,  H01L21/02697 ,  H01L23/48 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga2O3, Al2O3, SiO2 and ZnO according to the following percentage by mass: 0.5%˜10% of Ga2O3, 0.5%˜5% of Al2O3, 0.5%˜1.5% of SiO2, and the residue of ZnO; (2) sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2 Pa-5 Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15 sccm˜25 sccm, adopting a sputtering power of 40 W˜200 W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.

摘要翻译： 本发明涉及半导体材料制造技术领域。 提供多元素掺杂的氧化锌膜以及其光电装置中的制造方法和应用。 制造方法包括以下步骤：（1）按照以下的质量百分比混合Ga2O3，Al2O3，SiO2和ZnO的粉末：Ga2O3的0.5％〜10％，Al2O3的0.5％〜5％，Al2O3的0.5％〜1.5 ％的SiO 2，和ZnO的残留物; （2）将粉末混合物烧结成目标材料; （3）将目标材料放入磁性溅射室，抽真空，设定工作压力为0.2Pa-5Pa，引入惰性气体和氢气的混合气体，流速为15sccm〜25sccm，采用溅射功率 为40W〜200W，在基板上溅射，得到多元素掺杂的氧化锌膜。

公开(公告)号：US20130214493A1

公开(公告)日：2013-08-22

申请号：US13482132

申请日：2012-05-29

申请人： Sung Chul Cha ,  Chang Hyun Shin ,  Ji Hwan Yun

发明人： Sung Chul Cha ,  Chang Hyun Shin ,  Ji Hwan Yun

IPC分类号： F16J9/26

CPC分类号： C23C14/0057 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/352 ,  C23C28/322 ,  C23C28/34 ,  C23C28/42 ,  F16J9/26

摘要： Disclosed is a piston ring having a multi-layer coating. The piston ring includes a buffer layer, a intermediate layer, a TiAlN/CrN nano multilayer, and a TiAlCN layer. The buffer layer is coated over a base material of a piston ring. The intermediate layer is coated over the buffer layer. The TiAlN/CrN nano multilayer is coated over the intermediate layer. The TiAlCN layer is coated over the TiAlN/CrN nano multilayer as an outermost surface layer.

摘要翻译： 公开了一种具有多层涂层的活塞环。 活塞环包括缓冲层，中间层，TiAlN / CrN纳米多层和TiAlCN层。 缓冲层涂覆在活塞环的基材上。 中间层涂覆在缓冲层上。 TiAlN / CrN纳米多层涂覆在中间层上。 将TiAlCN层涂覆在TiAlN / CrN纳米多层上作为最外表面层。