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公开(公告)号:US20190259628A1
公开(公告)日:2019-08-22
申请号:US16400659
申请日:2019-05-01
发明人: Zhimin BAI , Qiang LI , Bin DENG , Yuchun DENG , Hougong WANG , Peijun DING
IPC分类号: H01L21/324 , H01L21/67
摘要: A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.