-
公开(公告)号:US20220356564A1
公开(公告)日:2022-11-10
申请号:US17637064
申请日:2020-12-29
发明人: Leonid Aleksandrovich KARPYUK , Vladislav Konstantinovich ORLOV , Sergey Igorevich IVANOV , Alexey Vladimirovich GLEBOV , Fyodor Viktorovich MAKAROV , Roman Gennadyevich ZAKHAROV , Ivan Alexandrovich DZYUBINSKY , Alexander Pavlovich PONOMARENKO , Alexander Dmitrievich BAGDATYEV
IPC分类号: C23C16/32 , C23C16/26 , C23C16/01 , G21C3/07 , D04C1/02 , D04C1/12 , C04B41/00 , C04B41/50 , C04B41/45 , C04B41/52 , C04B41/87
摘要: The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.