公开(公告)号：US20210193841A1

公开(公告)日：2021-06-24

申请号：US16078160

申请日：2017-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong HE ,  Dongsheng LI ,  Shengguang BAN ,  Rui HUANG ,  Dongcan MI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/267 ,  H01L29/66

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.