公开(公告)号：US20230142678A1

公开(公告)日：2023-05-11

申请号：US17432445

申请日：2021-02-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Haizheng ZHONG ,  Dengbao HAN ,  Chenhui WANG ,  Shuai CHANG ,  Yang LIU ,  Xiang MIAO

IPC: H10K85/50 ,  H10K71/10 ,  C09K11/06

CPC classification number: H10K85/50 ,  H10K71/10 ,  C09K11/06 ,  H10K50/11

Abstract: The disclosure relates to the technical field of display, in particular to a luminescent film, a preparation method thereof, and an electroluminescent device. The luminescent film comprises: a crystallized blue-light perovskite material, and halogenated amine ligand materials grafted on the crystallized blue-light perovskite material, wherein the crystallized blue-light perovskite material comprises 3D perovskite nano-crystals; and the halogenated amine ligand materials comprise a first halogenated amine ligand material and a second halogenated amine ligand material, and the first halogenated amine ligand material is different from the second halogenated amine ligand material. The disclosure is suitable for manufacturing luminescent films and electroluminescent devices.

公开(公告)号：US20200035764A1

公开(公告)日：2020-01-30

申请号：US16445749

申请日：2019-06-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shuai CHANG ,  Haizheng ZHONG ,  Dengbao HAN

IPC: H01L27/32 ,  H01L51/50 ,  H01L51/42 ,  H01L51/56 ,  H05B37/02 ,  H05B33/08

Abstract: The present disclosure provides a diode device comprising a first electrode, a hole transport layer, a functional layer, an electron transport layer and a second electrode that are stacked, wherein the functional layer comprises at least one sub-functional layer each comprising a photo-detection layer and an electroluminescent layer which are stacked and a difference of energy barriers between the photo-detection layer and the electroluminescent layer is not more than 1.5 eV; the photo-detection layer comprises a nanocrystalline derived from a copper indium sulfide system compound, and the electroluminescent layer comprises an oil-soluble nanocrystalline. The present disclosure further provides a method for manufacturing a diode device, and a diode apparatus having both electro-luminescence and photoelectric response properties, and higher material universal applicability.

公开(公告)号：US20210359241A1

公开(公告)日：2021-11-18

申请号：US16617891

申请日：2019-01-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xin ZHANG ,  Haizheng ZHONG ,  Shuai CHANG

IPC: H01L51/50 ,  H01L51/56

Abstract: Disclosed belongs to the technical field of displaying, and relates to a quantum dot light emitting diode and a method. for manufacturing the same, and a display panel. The method for manufacturing the quantum dot light emitting diode comprises steps of forming a cathode, an electron transport layer doping a substance capable of trapping current carriers comprising a N-type metal oxide and a quantum dot material with a surface ligand comprising a hydroxyl group, a light emitting layer, a hole transport layer and an anode. The quantum dot light emitting diode can effectively reduce the electron transport or injection by incorporating a substance capable of trapping current carriers, and therefore significantly improve the luminous efficiency. Meanwhile, the PEDOT:PSS with high conductivity is used as the transparent anode, and thus the whole structure may be manufactured totally by using solution processes at low cost and without high vacuum coating machines.

公开(公告)号：US20220396729A1

公开(公告)日：2022-12-15

申请号：US17598638

申请日：2020-12-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haizheng ZHONG ,  Zhiwei LONG ,  Gaoling YANG ,  Kai GU ,  Yang LIU ,  Zhuo CHEN

IPC: C09K11/54 ,  C09K11/88 ,  B82Y40/00

Abstract: A method for preparing a ZnSe quantum dot, a ZnSe quantum dot, a ZnSe structure and a display device are provided. The method includes preparing a first zinc precursor solution, a second zinc precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution, adding the first selenium precursor solution to the second zinc precursor solution to form an intermediate of the ZnSe quantum dot, performing the following operation at least once to form the ZnSe quantum dot: sequentially adding the first zinc precursor solution and the second selenium precursor solution to the intermediate of the ZnSe quantum dot and making the first zinc precursor solution, the second selenium precursor solution, and the intermediate of the ZnSe quantum dot react.

公开(公告)号：US20220282155A1

公开(公告)日：2022-09-08

申请号：US17750965

申请日：2022-05-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haizheng ZHONG ,  Zhiwei LONG ,  Gaoling YANG ,  Kai GU ,  Yang LIU ,  Zhuo CHEN

IPC: C09K11/88 ,  B82Y40/00 ,  B82Y20/00

Abstract: A method for preparing a quantum dot, a quantum dot, and a display device, are provided. The method includes the following steps: providing a first precursor solution, a second precursor solution, a first selenium precursor solution, and a second selenium precursor solution with a lower reaction activity than the first selenium precursor solution; adding the first selenium precursor solution to the second precursor solution to form an intermediate of the quantum dot; performing the following step at least once to form the quantum dot: adding the first precursor solution and the second selenium precursor solution to the intermediate of the quantum dot and making them react.