公开(公告)号：US20240379885A1

公开(公告)日：2024-11-14

申请号：US18032582

申请日：2022-05-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hao WU ,  Feng GUAN ,  Jianhua DU ,  Yang LV ,  Rui YAN ,  Meng ZHAO ,  Chaolu WANG

IPC: H01L31/0392 ,  H01L27/146 ,  H01L29/786

Abstract: The present disclosure provides a ray detector, a method for manufacturing a ray detector, and an electronic device. The method includes: forming a buffer layer on a first surface of a substrate, wherein the first surface of the substrate includes a first region and a second region; forming a shared layer on a surface of the buffer layer distal to the substrate; processing a portion of the shared layer in the first region to obtain an active layer of a thin film transistor; and processing a portion of the shared layer in the second region to obtain an absorption layer of a photodiode.