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公开(公告)号：US20210151605A1
公开(公告)日：2021-05-20
申请号：US16642638
申请日：2019-03-04
发明人： Zhi WANG , Guangcai YUAN , Feng GUAN , Chen XU , Xueyong WANG , Jianhua DU , Chao LI , Lei CHEN
IPC分类号： H01L29/786 , H01L29/66
摘要： The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.
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公开(公告)号：US20210111200A1
公开(公告)日：2021-04-15
申请号：US16846888
申请日：2020-04-13
发明人： Yupeng GAO , Guangcai YUAN , Feng GUAN , Zhi WANG , Jianhua DU , Zhaohui QIANG , Chao LI
IPC分类号： H01L27/12 , H01L29/24 , H01L29/786 , H01L29/66
摘要： The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.
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3.发明申请公开(公告)号：US20220115413A1
公开(公告)日：2022-04-14
申请号：US17263748
申请日：2020-03-27
发明人： Chao LUO , Feng GUAN , Zhi WANG , Jianhua DU , Yang LV , Zhaohui QIANG , Chao LI
IPC分类号： H01L27/12
摘要： A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.
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4.发明申请公开(公告)号：US20180277344A1
公开(公告)日：2018-09-27
申请号：US15541883
申请日：2017-01-03
发明人： Zhongpeng TIAN , Xuewei GAO , Lei XIAO , Jianhua DU
摘要： A magnetron sputtering device, a magnetron sputtering apparatus, and a magnetron sputtering method are provided. The magnetron sputtering device includes: a target material bearing portion, configured to bear a target material thereon; a magnet bearing section, configured to bear a magnet thereon and to be capable of driving the magnet to perform reciprocating motion along a predetermined path with respect to the target material bearing portion; a limit sensor, configured to determine an end-point position of the predetermined path along which the magnet performs reciprocating motion; the end-point position determined by the limit sensor can be adjusted along the predetermined path during a working procedure of the magnetron sputtering device.
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公开(公告)号：US20180252370A1
公开(公告)日：2018-09-06
申请号：US15737532
申请日：2017-05-24
发明人： Xin WANG , Jianhua DU
CPC分类号： F21K9/61 , F21Y2115/10 , G02B5/0215 , G02B5/201 , G02B6/0025 , G02B6/0043 , G02B6/005 , G02B27/0955 , G02B27/30 , G02F1/1335
摘要： The present disclosure provides a backlight module, a method for operating the same and a display device including the backlight module. The backlight module comprises a light guide plate, a collimated light source and a shading plate between the light guide plate and the collimated light source. The light guide plate comprises a transparent main body and a plurality of diffusion dots formed on the transparent main body. The shading plate comprises a plurality of shading regions corresponding to the plurality of diffusion dots of the light guide plate. The collimated light source generates collimated light vertically irradiating on the shading plate.
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公开(公告)号：US20210005769A1
公开(公告)日：2021-01-07
申请号：US16909526
申请日：2020-06-23
发明人： Chao LI , Jianhua DU , Feng GUAN , Yupeng GAO , Zhaohui QIANG , Zhi WANG , Yang LYU , Chao LUO
IPC分类号： H01L31/105 , H01L27/12 , H01L31/12 , H01L31/18
摘要： The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.
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公开(公告)号：US20190049827A1
公开(公告)日：2019-02-14
申请号：US15565793
申请日：2017-06-30
发明人： Xin WANG , Jianhua DU , Fan YANG
摘要： A projection device includes a snap-in structure for securing a mobile terminal; a first data interface arranged on the device body and connected to a second data interface of the mobile terminal; and a projection unit secured on the device body and connected to the first data interface.
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公开(公告)号：US20180209036A1
公开(公告)日：2018-07-26
申请号：US15501729
申请日：2016-07-27
发明人： Jianhua DU , Can WANG , Xiaolong HE , Xuefei SUN
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/3407 , H01J37/3414 , H01J37/3435 , H01J37/3488
摘要： A sputtering apparatus and a target changing device thereof are disclosed. The target changing device includes a stand, a mounting shaft on the stand, a target mounting body sleeved on an outside of the mounting shaft and being ratable around an axis of the mounting shaft, and a first driving mechanism configured to drive the target mounting body to rotate around the axis of the mounting shaft. The target mounting body includes at least two target mounting surfaces configured to mount targets. When the target mounting body rotates around the axis of the mounting shaft, each of the target mounting surfaces may be switched between an operating state orientation and an idle orientation
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公开(公告)号：US20210028315A1
公开(公告)日：2021-01-28
申请号：US16641078
申请日：2019-02-22
发明人： Zhaohui QIANG , Feng GUAN , Zhi WANG , Yupeng GAO , Yang LYU , Chao LI , Jianhua DU , Lei CHEN
IPC分类号： H01L29/786 , H01L29/66 , H01L29/45 , H01L29/417
摘要： The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.
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公开(公告)号：US20200241293A1
公开(公告)日：2020-07-30
申请号：US16652631
申请日：2019-03-28
发明人： Xin WANG , Fan YANG , Jianhua DU , Lei CAO
摘要： Provided are a vehicle-mounted display device and a display system. The vehicle-mounted display device includes: an image source, a light reflection module, and an image size adjustment module which are located on a light path; wherein the image source is configured to emit image light to the light reflection module according to an image to be displayed; the light reflection module reflects the image light at least twice, and emits same to the image size adjustment module; and the image size adjustment module is configured to adjust and emit the image light incident thereon.
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