Ray detector, method for manufacturing the same and electronic device

    公开(公告)号:US11125894B2

    公开(公告)日:2021-09-21

    申请号:US16647281

    申请日:2019-10-08

    IPC分类号: G01T1/20 H01L27/146

    摘要: A ray detector includes a base substrate including a plurality of pixel regions arranged in an array. Each pixel region includes a thin film transistor including a source and a drain, and a photoelectric sensor on the thin film transistor. The photoelectric sensor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer on the first electrode and the second electrode and covering the first electrode and the second electrode, and a first semiconductor layer on the dielectric layer. The first electrode is electrically connected to the drain. A distance between a surface of the first electrode away from the base substrate and the base substrate is a first distance. A distance between a surface of the second electrode away from the base substrate and the base substrate is a second distance. The first distance is substantially equal to the second distance.