公开(公告)号：US20140209912A1

公开(公告)日：2014-07-31

申请号：US14160778

申请日：2014-01-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zheng Liu ,  Im Jang Soon

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1288

Abstract: Embodiments of the present invention provide a method of manufacturing a pixel unit, in which only a single patterning process and a single doping process are performed on a polysilicon layer so as to form heavily doped regions of a thin film transistor and a lower electrode of a storage capacitor respectively, thereby reducing numbers of photolithography and masking processes required to manufacture a LTPS-TFT, shortening time periods for development and mass production, and reducing complexity of processes as well as monitoring difficulty, and decreasing the production cost. The present invention further provides a pixel unit manufactured according to the method, an array substrate and a display device including the same.

Abstract translation: 本发明的实施例提供了一种制造像素单元的方法，其中在多晶硅层上仅执行单个图案化工艺和单个掺杂工艺，以便形成薄膜晶体管和下部电极的重掺杂区域 从而减少制造LTPS-TFT所需的光刻和掩模工艺的数量，缩短开发和批量生产的时间，并且降低工艺的复杂性以及监测难度以及降低生产成本。 本发明还提供一种根据该方法制造的像素单元，阵列基板和包括该像素单元的显示装置。

公开(公告)号：US09431434B2

公开(公告)日：2016-08-30

申请号：US14160778

申请日：2014-01-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zheng Liu ,  Im Jang Soon

IPC: H01L27/12 ,  H01L21/447 ,  H01L21/324

CPC classification number: H01L27/1255 ,  H01L27/1288

Abstract: Embodiments of the present invention provide a method of manufacturing a pixel unit, in which only a single patterning process and a single doping process are performed on a polysilicon layer so as to form heavily doped regions of a thin film transistor and a lower electrode of a storage capacitor respectively, thereby reducing numbers of photolithography and masking processes required to manufacture a LTPS-TFT, shortening time periods for development and mass production, and reducing complexity of processes as well as monitoring difficulty, and decreasing the production cost. The present invention further provides a pixel unit manufactured according to the method, an array substrate and a display device including the same.

Abstract translation: 本发明的实施例提供了一种制造像素单元的方法，其中在多晶硅层上仅执行单个图案化工艺和单个掺杂工艺，以便形成薄膜晶体管和下部电极的重掺杂区域 从而减少制造LTPS-TFT所需的光刻和掩模工艺的数量，缩短开发和批量生产的时间，并且降低工艺的复杂性以及监测难度以及降低生产成本。 本发明还提供一种根据该方法制造的像素单元，阵列基板和包括该像素单元的显示装置。

公开(公告)号：US09397125B2

公开(公告)日：2016-07-19

申请号：US14160778

申请日：2014-01-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zheng Liu ,  Im Jang Soon

IPC: H01L27/12 ,  H01L21/447 ,  H01L21/324

Abstract: Embodiments of the present invention provide a method of manufacturing a pixel unit, in which only a single patterning process and a single doping process are performed on a polysilicon layer so as to form heavily doped regions of a thin film transistor and a lower electrode of a storage capacitor respectively, thereby reducing numbers of photolithography and masking processes required to manufacture a LTPS-TFT, shortening time periods for development and mass production, and reducing complexity of processes as well as monitoring difficulty, and decreasing the production cost. The present invention further provides a pixel unit manufactured according to the method, an array substrate and a display device including the same.