公开(公告)号：US11930674B2

公开(公告)日：2024-03-12

申请号：US17261034

申请日：2020-03-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Yunlong Li ,  Pengcheng Lu ,  Shuai Tian ,  Yu Ao ,  Zhijian Zhu ,  Yuanlan Tian

IPC: H10K59/131 ,  H10K59/12 ,  H10K59/124 ,  H10K71/16

CPC classification number: H10K59/131 ,  H10K59/1201 ,  H10K59/124 ,  H10K71/162

Abstract: Provided is a display substrate, including: a silicon-based substrate having a display area, a binding area located on one side of the display area, and a trace area located between the display area and the binding area; a trace protection structure is arranged on the silicon-based substrate in the trace area, and a pad assembly is integrated in the silicon-based substrate in the binding area; and a minimum distance between an edge of an orthographic projection of the trace protection structure on the silicon-based substrate and an edge of an orthographic projection of an opening of the pad assembly on the silicon-based substrate is smaller than a maximum size of one subpixel.

公开(公告)号：US11871625B2

公开(公告)日：2024-01-09

申请号：US17266625

申请日：2020-03-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Pengcheng Lu ,  Shengji Yang ,  Kuanta Huang ,  Xiaochuan Chen ,  Yage Song ,  Yanming Wang ,  Hui Wang ,  Dongdong Duan ,  Jiantong Li ,  Xiao Bai ,  Yunlong Li ,  Shuai Tian ,  Zhijian Zhu ,  Yu Ao ,  Junbo Wei ,  Chao Pu ,  Yuanlan Tian

IPC: H01L23/00 ,  H10K59/131 ,  H10K59/12

CPC classification number: H10K59/131 ,  H10K59/1201

Abstract: Provided are a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a silicon-based substrate and an array structure layer arranged on the silicon-based substrate; a driving transistor and a first power line being arranged in the silicon-based substrate in the display area, a light emitting element being disposed on the array structure layer in the display area, a first electrode of the driving transistor being connected with the first power line, and a second electrode of the driving transistor being connected with an anode of the light emitting element; a power supply electrode and a second power line being arranged in the silicon-based substrate in the peripheral area, the power supply electrode being connected with the second power line.