公开(公告)号：US20160116412A1

公开(公告)日：2016-04-28

申请号：US14989341

申请日：2016-01-06

Applicant: BT IMAGING PTY LIMITED

Inventor： Thorsten Trupke ,  Robert Andrew Bardos

IPC: G01N21/64 ,  H01L21/66 ,  G01N21/88

CPC classification number: G01N21/6489 ,  F21Y2115/10 ,  G01N21/6456 ,  G01N21/8851 ,  G01N2021/8887 ,  H01L22/14

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.

Abstract translation: 描述了用于检查间接带隙半导体结构（140）的方法（600）和系统（100）。 光源（110）产生适于在间接带隙半导体结构（140）中诱导光致发光的光（612）。 短路滤波器单元（114）将产生的光的长波长光减少到特定发射峰以上。 准直器（112）准直（616）光。 间接带隙半导体结构（140）的大面积基本均匀地并且被同步地照射（618）并且被准直的短路滤波的光。 图像捕获装置（130）捕获（620）由间隔带隙半导体结构的跨越大面积的基本均匀的同时照射入射引起的光致发光图像。 使用在大面积中诱导的光致发光的空间变化来对光致发光图像进行图像处理（622）以量化间接带隙半导体结构（140）的空间分辨的指定电子特性。

公开(公告)号：US09909991B2

公开(公告)日：2018-03-06

申请号：US14989341

申请日：2016-01-06

Applicant: BT IMAGING PTY LIMITED

Inventor： Thorsten Trupke ,  Robert Andrew Bardos

IPC: G01J3/40 ,  G01N21/64 ,  H01L21/66 ,  G01N21/88 ,  F21Y115/10

CPC classification number: G01N21/6489 ,  F21Y2115/10 ,  G01N21/6456 ,  G01N21/8851 ,  G01N2021/8887 ,  H01L22/14

Abstract: Methods (600) and systems (100) for inspecting an indirect bandgap semiconductor structure (140) are described. A light source (110) generates light (612) suitable for inducing photoluminescence in the indirect bandgap semiconductor structure (140). A short-pass filter unit (114) reduces long-wavelength light of the generated light above a specified emission peak. A collimator (112) collimates (616) the light. A large area of the indirect bandgap semiconductor structure (140) is substantially uniformly and simultaneously illuminated (618) with the collimated, short-pass filtered light. An image capture device (130) captures (620) images of photoluminescence simultaneously induced by the substantially uniform, simultaneous illumination incident across the large area for the indirect bandgap semiconductor structure. The photoluminescence images are image processed (622) to quantify spatially resolved specified electronic properties of the indirect bandgap semiconductor structure (140) using the spatial variation of the photoluminescence induced in the large area.