Associative thin film memory organization
    1.
    发明授权
    Associative thin film memory organization 失效
    相关薄膜存储器组织

    公开(公告)号:US3614755A

    公开(公告)日:1971-10-19

    申请号:US3614755D

    申请日:1969-02-03

    Applicant: BURROUGHS CORP

    Inventor: HART JOSEPH W

    CPC classification number: G11C15/02

    Abstract: This disclosure relates to an associative memory organization of an array of thin film storage elements for the storing of bits and the complement bits corresponding thereto. Upon the presentation of a code word to the code word register, a ZERO residing in the significant bit level of the code word will cause the interrogation of a particular significant bit level in the memory array while the presence of a ONE in the code word will cause the interrogation of the corresponding complement bit level. In this manner, a match between the contents of a particular word location in the memory and the code word will result in the interrogation of only those memory elements which reside in a ZERO state in the matching word location. The disclosure also describes a manner of orienting the individual thin film storage elements to minimize the signal induced on the respective sense lines upon interrogation of that memory element when it resides in a ZERO state. The effect of the memory organization and storage element orientation is to allow a larger number of bits to be sensed for a matching word by reducing the accumulation of ZERO bit signals generated on the word level sense line which accumulations might otherwise cancel out a ONE bit signal that indicates a mismatch.

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