Engine and vehicle having the same

    公开(公告)号:US11952957B2

    公开(公告)日:2024-04-09

    申请号:US18214429

    申请日:2023-06-26

    Abstract: An engine includes a cylinder block, a cylinder head, and a piston. The cylinder head is connected to the cylinder block. The piston is movably connected to the cylinder block. The cylinder block, the cylinder head, and the piston form a combustion chamber. The cylinder head includes an intake valve hole and an exhaust valve hole. An intake valve is disposed at the intake valve hole and an exhaust valve is disposed at the exhaust valve hole. A barrier protrusion is protruded at the edge of the intake valve hole away from the exhaust valve hole. The included angle between a first connecting line connecting a first end of the barrier protrusion and a center of the intake valve hole and a second connecting line connecting a second end of the barrier protrusion and the center of the intake valve hole is greater than 120 degrees and less than or equal to 180 degrees.

    Epitaxial wafer and manufacturing method thereof
    2.
    发明授权
    Epitaxial wafer and manufacturing method thereof 有权
    外延晶片及其制造方法

    公开(公告)号:US08859315B2

    公开(公告)日:2014-10-14

    申请号:US13663000

    申请日:2012-10-29

    CPC classification number: H01L33/382 H01L33/007 H01L2933/0016

    Abstract: A semiconductor device comprises a substrate; a conductive layer deposited on a substrate, the conductive layer being patterned to include a first pattern, the first pattern including a major surface and a plurality of grids defined in the major surface, the major surface including first lines and a connecting portion, wherein the connecting portion is connected to an electrode; and an epitaxial layer disposed on the conductive layer, covering the grids and the first line between the adjacent grids.

    Abstract translation: 半导体器件包括衬底; 沉积在衬底上的导电层,所述导电层被图案化以包括第一图案,所述第一图案包括主表面和限定在所述主表面中的多个栅格,所述主表面包括第一线和连接部分,其中, 连接部分连接到电极; 以及设置在导电层上的外延层,覆盖相邻网格之间的网格和第一线。

    Epitaxial Wafer and Manufacturing Method Thereof
    3.
    发明申请
    Epitaxial Wafer and Manufacturing Method Thereof 有权
    外延晶圆及其制造方法

    公开(公告)号:US20130052807A1

    公开(公告)日:2013-02-28

    申请号:US13663000

    申请日:2012-10-29

    CPC classification number: H01L33/382 H01L33/007 H01L2933/0016

    Abstract: A semiconductor device comprises a substrate; a conductive layer deposited on a substrate, the conductive layer being patterned to include a first pattern, the first pattern including a major surface and a plurality of grids defined in the major surface, the major surface including first lines and a connecting portion, wherein the connecting portion is connected to an electrode; and an epitaxial layer disposed on the conductive layer, covering the grids and the first line between the adjacent grids.

    Abstract translation: 半导体器件包括衬底; 沉积在衬底上的导电层,所述导电层被图案化以包括第一图案,所述第一图案包括主表面和限定在所述主表面中的多个栅格,所述主表面包括第一线和连接部分,其中, 连接部分连接到电极; 以及设置在导电层上的外延层,覆盖相邻网格之间的网格和第一线。

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