公开(公告)号：US08822256B1

公开(公告)日：2014-09-02

申请号：US13856784

申请日：2013-04-04

Applicant: Bae Systems Information and Electronic Systems Integration Inc.

Inventor： Chi-Hua Yang ,  David Sargent

IPC: H01L21/00 ,  C23C4/12

CPC classification number: C23C14/0623 ,  C23C14/5826 ,  C23C14/5833 ,  C23C14/584 ,  C23C14/5873

Abstract: A method for fabricating infrared sensors is disclosed. a chalcogenide layer is initially deposited on a substrate. A group of vias is then formed within the chalcogenide layer. After the vias have been converted to a group of studs, a vanadium oxide layer is deposited on the chalcogenide layer covering the studs. Next, the vanadium oxide layer is separated into multiple vanadium oxide membranes. After the chalcogenide layer has been removed, each of the vanadium oxide membranes is allowed to be freestanding while only supported by a corresponding one of the studs. The vanadium oxide membranes will be used as infrared sensors.

Abstract translation: 公开了一种用于制造红外传感器的方法。 硫属化物层最初沉积在基底上。 然后在硫族化物层内形成一组通孔。 在通孔转换成一组螺柱之后，在覆盖螺柱的硫族化物层上沉积氧化钒层。 接下来，将氧化钒层分离成多个氧化钒膜。 在去除硫族化物层之后，允许每个氧化钒膜是独立的，而仅由对应的一个螺柱支撑。 氧化钒膜将用作红外传感器。