公开(公告)号：US20130074933A1

公开(公告)日：2013-03-28

申请号：US13242267

申请日：2011-09-23

申请人： Bang-Yen CHOU ,  Chung-Chi JEN ,  Wen-Hao YUAN ,  Yen-Liang TU ,  Chiu-Kung HUANG ,  Jun-Shing CHIOU ,  Tzo-Ing LIN ,  Juo-Hao LI

发明人： Bang-Yen CHOU ,  Chung-Chi JEN ,  Wen-Hao YUAN ,  Yen-Liang TU ,  Chiu-Kung HUANG ,  Jun-Shing CHIOU ,  Tzo-Ing LIN ,  Juo-Hao LI

IPC分类号： H01L31/0264 ,  H01L31/18

CPC分类号： H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

摘要： A photovoltaic device includes: a back electrode; a transparent front electrode; a p-type semiconductor layer disposed between the transparent front electrode and the back electrode and made from a first semiconductor compound including M1, M2, and A1, the p-type semiconductor layer having a M1/M2 atomic ratio; and an n-type layered structure disposed between the p-type semiconductor layer and the transparent front electrode and cooperating with the p-type semiconductor layer to form a p-n junction therebetween. The n-type layered structure includes an n-type semiconductor layer made from a second semiconductor compound including M3, M4, and A2 and having a M3/M4 atomic ratio less than the M1/M2 atomic ratio and greater than 0.1 and less than 0.9.

摘要翻译： 光电器件包括：背面电极; 透明前电极; p型半导体层，设置在透明前电极和背电极之间，由包括M1，M2和A1的第一半导体化合物制成，p型半导体层具有M1 / M2原子比; 以及设置在p型半导体层和透明前电极之间并与p型半导体层配合以在它们之间形成p-n结的n型分层结构。 n型分层结构包括由包含M3，M4和A2的第二半导体化合物制成的具有小于M1 / M2原子比的M3 / M4原子比且大于0.1且小于0.9的n型半导体层 。

公开(公告)号：US20130302239A1

公开(公告)日：2013-11-14

申请号：US13467577

申请日：2012-05-09

申请人： Chung-Chi JEN ,  Bang-Yen CHOU ,  Juo-Hao LI ,  Wen-Hao YUAN ,  Chiu-Kung HUANG ,  Jun-Shing CHIOU ,  Tzo-Ing LIN

发明人： Chung-Chi JEN ,  Bang-Yen CHOU ,  Juo-Hao LI ,  Wen-Hao YUAN ,  Chiu-Kung HUANG ,  Jun-Shing CHIOU ,  Tzo-Ing LIN

IPC分类号： C01B19/00

CPC分类号： C01B19/002 ,  C01P2002/50 ,  C01P2002/72

摘要： A method for making a chalcopyrite-type compound includes reacting a reaction mixture in a solvent under a reaction temperature and a reaction pressure to form the chalcopyrite-type compound. The reaction mixture includes at least one first compound and at least one second compound. The first compound contains M1 and A. The reaction temperature ranges from 130-280° C. and the reaction pressure is greater than 3 Kg/cm2. The second compound contains M2 and A. M1 is selected from Cu, Au, Ag, Na, Li and K, M2 is selected from In, Ga, Al, Ti, Zn, Cd, Sn, Mg, and combinations thereof, and A is selected from S, Se, Te, and combinations thereof.

摘要翻译： 制备黄铜矿型化合物的方法包括使反应混合物在溶剂中在反应温度和反应压力下反应，形成黄铜矿型化合物。 反应混合物包括至少一种第一化合物和至少一种第二化合物。 第一种化合物含有M1和A.反应温度范围为130-280℃，反应压力大于3Kg / cm 2。 第二化合物含有M2和A.M1选自Cu，Au，Ag，Na，Li和K，M2选自In，Ga，Al，Ti，Zn，Cd，Sn，Mg及其组合，A 选自S，Se，Te及其组合。