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公开(公告)号:US20060191796A1
公开(公告)日:2006-08-31
申请号:US11164682
申请日:2005-12-01
申请人: Barry Muffoletto , David Goad , Neal Nesselbeck , Ashish Shah , Joseph Spaulding , Monica Kaforey , Christina Scheuer , Yanming Liu
发明人: Barry Muffoletto , David Goad , Neal Nesselbeck , Ashish Shah , Joseph Spaulding , Monica Kaforey , Christina Scheuer , Yanming Liu
IPC分类号: C25D5/18
CPC分类号: H01G9/0032 , C25D11/024 , C25D11/04 , C25D11/06 , C25D11/12 , C25D11/26
摘要: The present invention is directed to a method for anodizing valve metal structures to a target formation voltage with a controlled power source.
摘要翻译: 本发明涉及一种用控制电源将阀金属结构阳极氧化成目标成层电压的方法。