DETECTION SUBSTRATE AND FLAT PANEL DETECTOR
    3.
    发明公开

    公开(公告)号:US20240194705A1

    公开(公告)日:2024-06-13

    申请号:US17908418

    申请日:2021-08-31

    IPC分类号: H01L27/146 G01T1/20

    摘要: The present disclosure provides a detection substrate, including: a base substrate, detection pixel units arranged in an array on the base substrate, where each detection pixel unit includes: a thin film transistor and a photoelectric conversion part located on a side of the thin film transistor, and a bias voltage line is arranged on a side of the photoelectric conversion part. The thin film transistor includes: an active layer, a first electrode and a second electrode, and the active layer including a channel region. At least one dielectric layer is provided between the photoelectric conversion part and the bias voltage line, and is formed with a first via hole therein, and at least part of an orthographic projection of the channel region on the base substrate is located within an orthographic projection of the first via hole on the base substrate. A flat panel detector is further provided.

    DETECTION PANEL, METHOD FOR MANUFACTURING THE SAME AND FLAT PANEL DETECTOR

    公开(公告)号:US20220171079A1

    公开(公告)日:2022-06-02

    申请号:US17488616

    申请日:2021-09-29

    IPC分类号: G01T1/24 H01L27/146

    摘要: There is provided a detection panel, including: a substrate, gate lines, signal detection lines and pixels, a thin film transistor and an optical sensor are arranged in each pixel, the thin film transistor has a gate coupled with the corresponding gate line, a first electrode coupled with the corresponding signal detection line, and a second electrode coupled with a third electrode of the optical sensor in the same pixel; the pixels include at least one detecting pixel and at least one marking pixel, a first bias voltage line and a second bias voltage line are arranged on a side of the optical sensor away from the substrate, a fourth electrode of the optical sensor in the detecting pixel is coupled with the corresponding first bias voltage line, and the second electrode of the thin film transistor in the marking pixel is coupled with the corresponding second bias voltage line.