FLAT PANEL DETECTOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220390623A1

    公开(公告)日:2022-12-08

    申请号:US17789826

    申请日:2021-05-19

    IPC分类号: G01T1/20 G01N23/04 H01L27/146

    摘要: Disclosed are a flat panel detector and a manufacturing method thereof. The flat panel detector including: a first optical assembly, having a first side and a second side opposite to the first side in a thickness direction of the flat panel detector, and including: a first scintillator layer configured for converting at least part of rays into a first visible light; and a first light guide component stacked with the first scintillator layer and configured for guiding the first visible light; a first image sensor assembly stacked with the first optical assembly, configured for receiving the first visible light, and including: a first image sensor located at the first side of the first optical assembly; and a second image sensor located at the second side of the first optical assembly.

    DETECTION SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND FLAT PANEL DETECTOR

    公开(公告)号:US20220299663A1

    公开(公告)日:2022-09-22

    申请号:US17587390

    申请日:2022-01-28

    摘要: The present disclosure provides a detection substrate, a method for manufacturing the same and a flat panel detector. The detection substrate includes a base substrate and at least one pixel unit, the pixel unit includes: a transistor, an oxide layer, a reading electrode, and a photoelectric conversion structure sequentially arranged in a direction away from the base substrate, the reading electrode is electrically connected with the photoelectric conversion structure, the oxide layer is positioned between the transistor and the reading electrode, the oxide layer has a first through hole therein, an orthographic projection of the oxide layer on the base substrate at least covers that of the transistor on the base substrate, the reading electrode is electrically connected with the transistor through the first through hole, orthographic projections of the first through hole and the transistor on the base substrate are not overlapped with each other.

    FLAT PANEL DETECTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND FLAT PANEL DETECTOR

    公开(公告)号:US20220196858A1

    公开(公告)日:2022-06-23

    申请号:US17264621

    申请日:2020-04-17

    IPC分类号: G01T1/29

    摘要: A flat panel detector substrate includes a base substrate, a photoelectric conversion layer, a bias signal line, and a conductive structure. The photoelectric conversion layer is located on the base substrate. The photoelectric conversion layer has a first surface proximate to the base substrate and a second surface away from the base substrate. The bias signal line is located between the photoelectric conversion layer and the base substrate. The conductive structure is located on the base substrate. One end of the conductive structure is coupled to the second surface of the photoelectric conversion layer, another end of the conductive structure is coupled to the bias signal line, and a portion therebetween is located beside the photoelectric conversion layer.

    DETECTION SUBSTRATE, MANUFACTURING METHOD THEREOF AND FLAT PANEL DETECTOR

    公开(公告)号:US20220310683A1

    公开(公告)日:2022-09-29

    申请号:US17289783

    申请日:2020-07-22

    IPC分类号: H01L27/146

    摘要: The present disclosure discloses a detection substrate, a manufacturing method thereof and a flat panel detector. The detection substrate includes: a base substrate, as well as a plurality of transistors, an oxide layer, a plurality of read electrodes and a plurality of photoelectric conversion structures sequentially on the base substrate, wherein a first electrode of each of the transistors is electrically connected with each of the photoelectric conversion structures in a one-to-one correspondence mode via each of the read electrodes; a material of an active layer includes an oxide; each of the photoelectric conversion structures includes an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer; and the oxide layer at least covers channel regions of the transistors and is insulated from the read electrodes.

    SENSING SUBSTRATE AND ELECTRONIC DEVICE

    公开(公告)号:US20230054972A1

    公开(公告)日:2023-02-23

    申请号:US17789829

    申请日:2021-07-07

    IPC分类号: H01L23/60 H01L27/146 G01T1/20

    摘要: A sensing substrate and an electronic device are provided. The sensing substrate includes a sensing unit on a base substrate. The sensing unit includes a sensing element and a conductive pattern, the sensing element has a light incident surface and a back surface that are opposite and a side surface between the light incident surface and the back surface. The conductive pattern is on a side of the sensing element away from the base substrate, and has a hollow portion and a transparent conductive portion surrounding the hollow portion, an orthographic projection of the hollow portion on the base substrate is at least partially within an orthographic projection of the sensing element on the base substrate, and an orthographic projection of the transparent conductive portion on the base substrate at least partially overlaps with an orthographic projection of the side surface of the sensing element on the base substrate.

    FLAT PANEL DETECTOR
    6.
    发明申请

    公开(公告)号:US20210159262A1

    公开(公告)日:2021-05-27

    申请号:US16844174

    申请日:2020-04-09

    摘要: A flat panel detector includes: a substrate, a gate line and a read signal line define a detection region, a detection unit includes a first photoelectric converter, a thin film transistor and a second photoelectric converter, the first photoelectric converter and the second photoelectric converter are on two side of the thin film transistor and connected with it; a gate electrode layer of the thin film transistor is connected with the gate line, and a source electrode or a drain electrode of the thin film transistor is connected with the read signal line; a gap region is between the second photoelectric converter and at least one selected from a group consisting of the gate line defining the detection unit, the read signal line defining the detection unit and the thin film transistor, and an orthographic projection of the first photoelectric converter on the substrate at least covers the gap region.

    DETECTION SUBSTRATE, MANUFACTURING METHOD THEREOF, AND RAY DETECTOR

    公开(公告)号:US20220163684A1

    公开(公告)日:2022-05-26

    申请号:US17351566

    申请日:2021-06-18

    摘要: The present disclosure provides a detection substrate, a manufacturing method thereof and a ray detector. The detection substrate includes: a base substrate; a plurality of independent first electrodes arranged on the base substrate on the same layer; a photoelectric conversion layer arranged on a whole face of sides, facing away from the base substrate, of the plurality of first electrodes; a ray absorption layer arranged on a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer, wherein an orthographic projection of the ray absorption layer on the base substrate is overlapped with an orthographic projection of gaps between the first electrodes on the base substrate; and a second electrode arranged on a whole face of a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer.

    DISPLAY SUBSTRATE AND DISPLAY DEVICE
    9.
    发明申请

    公开(公告)号:US20200225791A9

    公开(公告)日:2020-07-16

    申请号:US16303310

    申请日:2018-04-18

    发明人: Jianxing SHANG

    IPC分类号: G06F3/041 H01L27/12

    摘要: The embodiment of the invention discloses a display substrate and a display device. The display substrate includes: data signal lines located in a display area of the display substrate; and fanout line in a fanout area adjacent the display area of the display substrate and respectively connected in one-to-one correspondence with the data signal lines, wherein the data signal fanout lines comprise a first fanout lines disposed in the same layer with a touch electrode of the display substrate.