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公开(公告)号：US06199484B1
公开(公告)日：2001-03-13
申请号：US09333105
申请日：1999-06-15
IPC分类号： F42B313
摘要： A semiconductor bridge igniter device (10) having integral voltage anti-fuse protection provides an electric circuit including a first firing leg and, optionally, a monitor leg. The first firing leg includes a first semiconductor bridge having semiconductor pads (14a, 14b) separated and connected by a bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b) so that an electrical potential applied across the metallized lands (16a, 16b) will cause sufficient current to flow through the firing leg of the electric circuit to release energy at the bridge (14c). A dielectric layer (15) is interposed within the first firing leg and has a breakdown voltage equal to a selected threshold voltage (Vth) and therefore provides protection against the device functioning at voltages below the threshold voltage (Vth). A continuity monitor leg of the electric circuit is comprised of either a fusible link (34) or a resistor (36) disposed in parallel to the first firing leg. A second firing leg may be provided which includes a second semiconductor bridge formed similar to the first semiconductor bridge although being mounted to receive a reverse polarity voltage from that of the first semiconductor bridge in order to reduce variations in firing voltage. A capacitor may be employed in parallel with the first firing leg in order to, e.g., reduce the effects of static electricity.
摘要翻译： 具有整体电压抗熔丝保护的半导体桥接点火装置（10）提供包括第一射击支路和任选的监视器支路的电路。 第一射击腿包括具有由桥（14c）分离并连接并且设置在焊盘（14a，14b）之上的金属化焊盘（16a，16b）的半导体焊盘（14a，14b）的第一半导体桥，使得施加电位 穿过金属化区域（16a，16b）将导致足够的电流流过电路的击发腿以释放桥（14c）处的能量。 电介质层（15）被置于第一击发腿内并且具有等于所选择的阈值电压（Vth）的击穿电压，因此在低于阈值电压（Vth）的电压下提供对器件的保护作用。 电路的连续性监视器支路由与第一发射支腿平行设置的可熔连接件（34）或电阻器（36）组成。 可以提供第二击发腿，其包括类似于第一半导体桥形成的第二半导体桥，虽然安装成接收与第一半导体电桥相反的极性电压，以便减小点火电压的变化。 为了例如减少静电的影响，可以使用电容器与第一射出支腿平行。
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公开(公告)号：US5992326A
公开(公告)日：1999-11-30
申请号：US985926
申请日：1997-12-05
CPC分类号： F42B3/13
摘要： A semiconductor bridge igniter device (10) having integral voltage anti-fuse protection provides an electric circuit including a firing leg and, optionally, a monitor leg. The firing leg comprises semiconductor pads (14a, 14b) separated and connected by a bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b) so that an electrical potential applied across the metallized lands (16a, 16b) will cause sufficient current to flow through the firing leg of the electric circuit to release energy at the bridge (14c). A dielectric layer (15) is interposed within the firing leg and has a breakdown voltage equal to a selected threshold voltage (V.sub.th) and therefore provides protection against the device functioning at voltages below the threshold voltage (V.sub.th). A continuity monitor leg of the electric circuit is comprised of either a fusible link (34) or a resistor (36) disposed in parallel to the firing leg.
摘要翻译： 具有整体电压抗熔丝保护的半导体桥式点火器装置（10）提供包括击发腿和任选的监视器腿的电路。 射击腿包括由桥（14c）分离和连接并且具有设置在焊盘（14a，14b）上方的金属化焊盘（16a，16b）的半导体焊盘（14a，14b），使得跨越金属化焊盘（16a）施加的电位 ，16b）将导致足够的电流流过电路的击发腿以在桥（14c）处释放能量。 电介质层（15）被插入击发腿内并且具有等于所选择的阈值电压（Vth）的击穿电压，并因此提供对在低于阈值电压（Vth）的电压下工作的器件的保护。 电路的连续性监视器支路由与发射支腿平行设置的可熔连接件（34）或电阻器（36）组成。
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公开(公告)号：US20080017063A1
公开(公告)日：2008-01-24
申请号：US11829526
申请日：2007-07-27
IPC分类号： F42C19/12
CPC分类号： F42B3/13
摘要： A titanium semiconductor bridge igniter (10, 10′) has a substrate (12, 12′) on which is carried a pair of spaced-apart pads (18a, 18b) connected by a bridge (20). The pads (18a, 18b) and bridge (20) are made of a layer of polysilicon (22) or crystalline silicon (22′) covered by a layer of titanium (24). Metal lands (26a, 26b) overlie the pads (18a, 18b) but leave the bridge (20) exposed so that it can be placed in contact with an energetic material charge (42). A method of stabilizing the titanium semiconductor bridge igniter (10, 10′) against temperature-induced variations in electrical resistance of bridge (20) includes heating the titanium semiconductor bridge igniter (10, 10′) to an elevated temperature, e.g., from about 37° C. to about 250° C.
摘要翻译： 钛半导体桥式点火器（10,10'）具有衬底（12,12'），在衬底上承载有由桥（20）连接的一对间隔开的衬垫（18a，18b）。 焊盘（18a，18b）和桥（20）由多晶硅层（22）或由一层钛（24）覆盖的晶体硅（22'）制成。 金属焊盘（26a，26b）覆盖焊盘（18a，18b），但是使桥（20）露出，使得其可以放置成与高能材料装料（42）接触。 稳定钛半导体桥接点火器（10,10'）以抵抗温度引起的桥（20）的电阻变化的方法包括将钛半导体桥接点火器（10,10'）加热到升高的温度，例如从约 37℃至约250℃
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公开(公告)号：US6133146A
公开(公告)日：2000-10-17
申请号：US644008
申请日：1996-05-09
CPC分类号： F42B3/13
摘要： A device, e.g., an explosive-initiation device (24) includes a semiconductor bridge device (10) comprising semiconductor pads (14a, 14b) separated by an initiator bridge (14c) and having metallized lands (16a, 16b) disposed over the pads (14a, 14b). The metallized lands (16a, 16b) each comprise a titanium base layer (18), a titanium-tungsten intermediate layer (20) and a tungsten top layer (22). This multilayer construction is simple to apply, provides good adhesion to the semiconductor (14) and enhanced semiconductor bridge characteristics, and avoids the electromigration problems attendant upon use of aluminum metallized lands under severe conditions of no-fire tests and very low firing voltage or current levels. The semiconductor (14) may optionally be covered by a cap or cover (117) of a stratified metal layer similar or identical to the metallized lands (16a, 16b). A method of making the semiconductor bridge devices includes metal sputtering of titanium, then titanium plus tungsten and then tungsten onto an appropriately masked semiconductor surface to attain the multilayer metallized lands (16a, 16b) and/or cover (117) of the invention.
摘要翻译： 诸如爆炸物引发装置（24）的装置包括半导体桥接装置（10），其包括由引发器桥（14c）分开并且具有设置在焊盘上的金属化焊盘（16a，16b）的半导体焊盘（14a，14b） （14a，14b）。 金属化焊盘（16a，16b）各自包括钛基层（18），钛 - 钨中间层（20）和钨顶层（22）。 这种多层结构易于应用，提供对半导体（14）的良好粘附性和增强的半导体桥特性，并且避免了在苛刻的无火试验条件下以及极低的点火电压或电流下使用铝金属化焊盘时伴随的电迁移问题 水平。 半导体（14）可以可选地由与金属化焊盘（16a，16b）类似或相同的分层金属层的盖或盖（117）覆盖。 制造半导体桥接器件的方法包括钛，然后钛加钨，然后钨到金属溅射到适当掩蔽的半导体表面上，以获得本发明的多层金属化焊盘（16a，16b）和/或盖（117）。
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公开(公告)号：US09134100B2
公开(公告)日：2015-09-15
申请号：US12754639
申请日：2010-04-06
摘要： A semiconductor bridge die may have an “H-design” or “trapezoidal” configuration in which a center bridge segment is flanked by one or more angled walls on each side of the bridge segment. Each wall is plated with a conductive material, thereby providing a continuous conductive path across the top surface of the die. A bottom surface of the die may be connected to a top surface of a header by epoxy in various configurations. The plated angled walls facilitate the solderable connection of the walls to a plated top surface of each of several pins on a top surface of the header, thereby providing a continuous electrical connection between the pins and the die. Also, a method is provided for manufacturing a semiconductor bridge die in accordance with the various embodiments of the die.
摘要翻译： 半导体桥模具可以具有“H设计”或“梯形”构造，其中中心桥段在桥段的每一侧的两侧具有一个或多个成角度的壁。 每个壁都镀有导电材料，从而提供穿过模具顶表面的连续导电路径。 模具的底表面可以通过环氧树脂以各种构造连接到集管的顶表面。 电镀角度的壁有助于将壁的可焊接连接到集管顶表面上的几个销的每一个的电镀顶表面，从而在销和管芯之间提供连续的电连接。 此外，提供了根据模具的各种实施例制造半导体桥模的方法。
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公开(公告)号：US20070056459A1
公开(公告)日：2007-03-15
申请号：US11555990
申请日：2006-11-02
IPC分类号： F42C19/12
CPC分类号： F42B3/13
摘要： A titanium semiconductor bridge igniter (10, 10′) has a substrate (12, 12′) on which is carried a pair of spaced-apart pads (18a, 18b) connected by a bridge (20). The pads (18a, 18b) and bridge (20) are made of a layer of polysilicon (22) or crystalline silicon (22′) covered by a layer of titanium (24). Metal lands (26a, 26b) overlie the pads (18a, 18b) but leave the bridge (20) exposed so that it can be placed in contact with an energetic material charge (42). A method of stabilizing the titanium semiconductor bridge igniter (10, 10′) against temperature-induced variations in electrical resistance of bridge (20) includes heating the titanium semiconductor bridge igniter (10, 10′) to an elevated temperature, e.g., from about 37° C. to about 250° C.
摘要翻译： 钛半导体桥式点火器（10,10'）具有衬底（12,12'），在衬底上承载有由桥（20）连接的一对间隔开的衬垫（18a，18b）。 焊盘（18a，18b）和桥（20）由多晶硅层（22）或由一层钛（24）覆盖的晶体硅（22'）制成。 金属焊盘（26a，26b）覆盖焊盘（18a，18b），但是使桥（20）露出，使得其可以放置成与高能材料装料（42）接触。 稳定钛半导体桥接点火器（10,10'）以抵抗温度引起的桥（20）的电阻变化的方法包括将钛半导体桥接点火器（10,10'）加热到升高的温度，例如从约 37℃至约250℃
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公开(公告)号：US20100258914A1
公开(公告)日：2010-10-14
申请号：US12754639
申请日：2010-04-06
IPC分类号： H01L29/06 , H01L21/302
摘要： A semiconductor bridge die may have an “H-design” or “trapezoidal” configuration in which a center bridge segment is flanked by one or more angled walls on each side of the bridge segment. Each wall is plated with a conductive material, thereby providing a continuous conductive path across the top surface of the die. A bottom surface of the die may be connected to a top surface of a header by epoxy in various configurations. The plated angled walls facilitate the solderable connection of the walls to a plated top surface of each of several pins on a top surface of the header, thereby providing a continuous electrical connection between the pins and the die. Also, a method is provided for manufacturing a semiconductor bridge die in accordance with the various embodiments of the die.
摘要翻译： 半导体桥模具可以具有“H设计”或“梯形”构造，其中中心桥段在桥段的每一侧的两侧具有一个或多个成角度的壁。 每个壁都镀有导电材料，从而提供穿过模具顶表面的连续导电路径。 模具的底表面可以通过环氧树脂以各种构造连接到集管的顶表面。 电镀角度的壁有助于将壁的可焊接连接到集管顶表面上的几个销的每一个的电镀顶表面，从而在销和管芯之间提供连续的电连接。 此外，提供了根据模具的各种实施例制造半导体桥模的方法。
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公开(公告)号：US07328657B2
公开(公告)日：2008-02-12
申请号：US10488063
申请日：2002-08-27
CPC分类号： F42B3/13 , H01L2224/73265
摘要： This invention relates to a solid-state or integrated circuit-type igniter die (10) having a bridge (18) that is formed on a non-planar surface of a substrate (12), and which therefore has a non-planar configuration. Igniter die (10), according to this invention therefore has a three-dimensional configuration and, preferably, a configuration that can enclose a reactive material (26) therein. In a typical embodiment, the bridge (18) of an igniter element of this invention has a tubular configuration. Reactive material (26) is disposed within the interior of the tube (14) and a charge of electric current is flowed through the tube (14) from o the other to form a plasma that initiates the remaining reactive material (26).
摘要翻译： 本发明涉及具有形成在基板（12）的非平面表面上的桥（18）的固态或集成电路型点火器模具（10），因此具有非平面构造。 因此，根据本发明的点火器模具（10）具有三维构造，并且优选地，可以在其中包围反应性材料（26）的构造。 在典型的实施例中，本发明的点火器元件的桥（18）具有管状构造。 反应性材料（26）设置在管（14）的内部，并且电流的电荷从另一端流过管（14），以形成引发剩余的反应性材料（26）的等离子体。
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9.发明授权Surface-connectable semiconductor bridge elements and devices including the same 失效表面可连接的半导体电桥元件和包括其的器件
公开(公告)号：US06054760A
公开(公告)日：2000-04-25
申请号：US771536
申请日：1996-12-23
IPC分类号： F42B3/13 , F42B3/198 , H01L21/301 , H01L21/822 , H01L27/04 , H01L29/866 , H01L23/48
CPC分类号： F42B3/13 , F42B3/198 , H01L2224/48091 , H01L2224/73265
摘要： A semiconductor element, e.g., a semiconductor bridge element (30), is surface mountable as it has thereon a metal layer comprised of metal lands (44) and electrical connectors 45a, 45b and 45c) which terminate in flat electrical contacts (47) on the back surface (35) of the element. Optionally, the element may also contain back-to-back zener diodes (46a, 46b) to provide unbiased protection against electrostatic discharge. When configured as a semiconductor bridge element (30), the element, among other uses, finds use as an igniter (13) for an explosive element. The elements may be made by a method including a cross-cut technique in which grooves (60) cut in the front surface (58) of a silicon wafer substrate (56) intersect grooves (64) cut in the back surface (62) of the wafer. The intersecting grooves (60,64) form a plurality of apertures in the wafer (56), the apertures and grooves helping to define a plurality of dies having side surfaces. A dielectric layer (48) is deposited on the wafer (56) and a polysilicon film (52) is deposited over the dielectric layer (48). A metal layer (44, 45a-45c, and 47) is then deposited on the wafer while it is still intact to provide an electrical connection from the top surface (34) of element (30) along the side surfaces (66a, 66b and 66c, and 68a, 68b and 66c) to the bottom surface (35) to constitute the dies as the semiconductor elements (30). The elements (30) are separated and the electrical contacts (47) of a given element can be mounted directly to a header (36) or the like by soldering, without need for connector wires (14).
摘要翻译： 诸如半导体电桥元件（30）的半导体元件可表面安装，其上具有由金属焊盘（44）和电连接器45a，45b和45c组成的金属层，其终止于平面电接触（47）上 元件的背面（35）。 可选地，该元件还可以包含背对背齐纳二极管（46a，46b），以提供无偏压的防静电保护。 当被配置为半导体电桥元件（30）时，除了其它用途之外，该元件可用作爆炸元件的点火器（13）。 元件可以通过包括横切技术的方法制成，其中在硅晶片衬底（56）的前表面（58）中切割的沟槽（60）与在其后表面（62）中切割的凹槽（64）相交， 晶圆。 相交槽（60,64）在晶片（56）中形成多个孔，所述孔和槽有助于限定具有侧表面的多个模具。 电介质层（48）沉积在晶片（56）上，多晶硅膜（52）沉积在电介质层（48）上。 然后金属层（44,45a-45c和47）沉积在晶片上，同时它仍然是完整的，以从元件（30）的顶表面（34）沿着侧表面（66a，66b和 66c和68a，68b和66c）连接到底表面（35）以构成作为半导体元件（30）的管芯。 元件（30）被分离，并且给定元件的电触点（47）可以通过焊接直接安装到集管（36）等，而不需要连接器线（14）。
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