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1.发明授权公开(公告)号：US09698196B2
公开(公告)日：2017-07-04
申请号：US12856701
申请日：2010-08-16
IPC分类号： H01L31/08 , H01L27/144 , H01L27/148
CPC分类号： H01L27/14812 , H01L27/14806
摘要： A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be realized also in CMOS technology. The charge transport in a surface or even a buried channel close to the surface is highly efficient in terms of speed, sensitivity and low trapping noise. In addition, by activating a majority carrier current flowing through the substrate, another drift field is generated below the depleted CCD channel. This drift field is located deeply in the substrate, acting as an efficient separator for deeply photo-generated electron-hole pairs. Thus, another large amount of minority carriers is transported to the diffusion nodes at high speed and detected.
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2.发明申请Demodulation Pixel Incorporating Majority Carrier Current, Buried Channel and High-Low Junction 有权解调像素结合多数载波电流，埋地通道和高低端公开(公告)号：US20110089471A1
公开(公告)日：2011-04-21
申请号：US12856701
申请日：2010-08-16
IPC分类号： H01L31/08
CPC分类号： H01L27/14812 , H01L27/14806
摘要： A demodulation pixel improves the charge transport speed and sensitivity by exploiting two effects of charge transport in silicon in order to achieve the before-mentioned optimization. The first one is a transport method based on the CCD gate principle. However, this is not limited to CCD technology, but can be realized also in CMOS technology. The charge transport in a surface or even a buried channel close to the surface is highly efficient in terms of speed, sensitivity and low trapping noise. In addition, by activating a majority carrier current flowing through the substrate, another drift field is generated below the depleted CCD channel. This drift field is located deeply in the substrate, acting as an efficient separator for deeply photo-generated electron-hole pairs. Thus, another large amount of minority carriers is transported to the diffusion nodes at high speed and detected.
摘要翻译： 解调像素通过利用硅中的电荷传输的两种效应来提高电荷传输速度和灵敏度，以便实现前述的优化。 第一种是基于CCD门原理的传输方法。 然而，这不仅限于CCD技术，而且还可以在CMOS技术中实现。 在速度，灵敏度和低陷阱噪声方面，表面甚至靠近表面的掩埋通道中的电荷传输都是高效的。 此外，通过激活流过衬底的多数载流子电流，在耗尽的CCD通道之下产生另一个漂移场。 该漂移场深深地位于基板中，作为深色光电子 - 空穴对的有效分离器。 因此，另外大量少数载体被高速运送到扩散节点并进行检测。
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公开(公告)号：US08754939B2
公开(公告)日：2014-06-17
申请号：US12942598
申请日：2010-11-09
CPC分类号： H04N5/37452
摘要： A demodulation structure for a n-tap pixel, mainly for 3D time-of-flight (TOF) applications uses a 2-stage switch structure for demodulating a modulated electromagnetic wave. An almost arbitrary number of storage sites per pixel can be implemented enabling an almost arbitrary number of samplings captured during one exposure. It also provides the option to demodulate and integrate different phasing samples according to the different modulation frequencies within the same exposure.
摘要翻译： 主要用于3D飞行时间（TOF）应用的n抽头像素的解调结构使用2级开关结构来解调调制的电磁波。 可以实现每像素几乎任意数量的存储位置，使得能够在一次曝光期间捕获几乎任意数量的采样。 它还提供了在相同曝光中根据不同调制频率对不同定相样本进行解调和集成的选项。
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公开(公告)号：US20110273561A1
公开(公告)日：2011-11-10
申请号：US12942598
申请日：2010-11-09
CPC分类号： H04N5/37452
摘要： A demodulation structure for a n-tap pixel, mainly for 3D time-of-flight (TOF) applications uses a 2-stage switch structure for demodulating a modulated electromagnetic wave. An almost arbitrary number of storage sites per pixel can be implemented enabling an almost arbitrary number of samplings captured during one exposure. It also provides the option to demodulate and integrate different phasing samples according to the different modulation frequencies within the same exposure.
摘要翻译： 主要用于3D飞行时间（TOF）应用的n抽头像素的解调结构使用2级开关结构来解调调制的电磁波。 可以实现每像素几乎任意数量的存储位置，使得能够在一次曝光期间捕获几乎任意数量的采样。 它还提供了在相同曝光中根据不同调制频率对不同定相样本进行解调和集成的选项。
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公开(公告)号：US20080247033A1
公开(公告)日：2008-10-09
申请号：US12090433
申请日：2006-10-05
CPC分类号： H03D7/00
摘要： A demodulation device (1) in semiconductor technology is disclosed. The device (1) is capable of demodulating an injected modulated current. The device (1) comprises an input node (IN1), a sampling stage (DG1, IG1, GS1 IG2, DG2) and at least two output nodes (D1, D2). The sampling stage DG1, IG1, GS1, IG2, DG2) comprises transfer means (GL, GM, GR) for transferring a modulated charge-current signal from the input node (IN1) to one of the output nodes (D1, D2) allocated to the respective time interval within the modulation period. The small size and the ability to reproduce the device (1) in standard semiconductor technologies make possible a cost-efficient integration of the device (1).
摘要翻译： 公开了半导体技术中的解调装置（1）。 装置（1）能够解调注入的调制电流。 装置（1）包括输入节点（IN 1），采样级（DG 1，IG 1，GS 1 IG 2，DG 2）和至少两个输出节点（D 1，D 2）。 采样级DG 1，IG 1，GS 1，IG 2，DG 2）包括用于将调制的充电电流信号从输入节点（IN 1）传送到输出节点之一的传送装置（GL，GM，GR） （D 1，D 2）分配给调制周期内的各个时间间隔。 在标准半导体技术中，小尺寸和再现设备（1）的能力使得设备（1）的成本有效的集成成为可能。
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公开(公告)号：US20090021617A1
公开(公告)日：2009-01-22
申请号：US12175091
申请日：2008-07-17
IPC分类号： H04N5/335
CPC分类号： G01S17/89
摘要： An integrated sensor chip comprises at least one pixel. The at least one pixel comprises: one or several integration regions for receiving and storing photogenerated charges; a modulation region that moves the photogenerated charges to be stored in the at least two integration regions; and sense nodes, in which each of the sense nodes is associated with one of the integration regions, into which the photogenerated charges are moved from the integration regions during a readout stage. The chip comprises: at least one function generator for generating a time-varying function that is applied to the integration regions during the readout cycle to move the photogenerated changes to the sense nodes; a counter generates a count during the generation of the time-varying function; and registers, in which each of the registers is associated with one of the sense nodes during read out, for storing digital values; wherein the registers store the count in response to the associated sense node receiving photogenerated charges from the associated integration regions.
摘要翻译： 集成传感器芯片包括至少一个像素。 所述至少一个像素包括：用于接收和存储光生电荷的一个或几个积分区域; 调制区域，其移动要存储在所述至少两个积分区域中的光生电荷; 以及感测节点，其中每个感测节点与所述积分区域之一相关联，所述积分区域在读出阶段期间从所述积分区域移动所述光生电荷。 该芯片包括：至少一个功能发生器，用于产生在读出周期期间应用于积分区域的时变功能，以将光生变化移动到感测节点; 在产生时变功能期间，计数器产生计数; 和寄存器，其中每个寄存器在读出期间与感测节点之一相关联，用于存储数字值; 其中所述寄存器响应于所述相关联的感测节点从相关联的积分区域接收光生电荷而存储所述计数。
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7.发明授权Reference pixel array with varying sensitivities for time of flight (TOF) sensor 有权参考像素阵列具有不同的飞行时间（TOF）传感器的灵敏度公开(公告)号：US07586077B2
公开(公告)日：2009-09-08
申请号：US12175100
申请日：2008-07-17
IPC分类号： H01L27/00
CPC分类号： G01S17/89 , G01S7/4816 , G01S7/497 , G01S17/42
摘要： The sensitivity of a reference pixel array RPA to the reference modulated light MLR is varied for different reference pixels RP of the reference pixel array RPA. In one embodiment the different sensitivities of the reference pixels RP in the RPA is achieved by designing the pixels to have different light sensitivities with respect to each other. In another embodiment, the different sensitivities are achieved by changing optical coupling between the separate reference pixels RP of the reference pixel array RPA to the reference modulated light MLR such as by changing how the different reference pixels RP couple to the aperture LGA of the light guide LG.
摘要翻译： 对于参考像素阵列RPA的不同参考像素RP，参考像素阵列RPA对参考调制光MLR的灵敏度是变化的。 在一个实施例中，RPA中的参考像素RP的不同灵敏度通过将像素设计为具有彼此不同的光灵敏度来实现。 在另一个实施例中，通过改变参考像素阵列RPA的单独参考像素RP与参考调制光MLR之间的光学耦合来实现不同的灵敏度，例如通过改变不同的参考像素RP如何耦合到光导的孔径LGA LG。
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公开(公告)号：US07671671B2
公开(公告)日：2010-03-02
申请号：US12090433
申请日：2006-10-05
IPC分类号： G01R25/00 , H03D13/00 , H03K17/693
CPC分类号： H03D7/00
摘要： A demodulation device (1) in semiconductor technology is disclosed. The device (1) is capable of demodulating an injected modulated current. The device (1) comprises an input node (IN1), a sampling stage (DG1, IG1, GS1, IG2, DG2) and at least two output nodes (D1, D2). The sampling stage DG1, IG1, GS1, IG2, DG2) comprises transfer means (GL, GM, GR) for transferring a modulated charge-current signal from the input node (IN1) to one of the output nodes (D1, D2) allocated to the respective time interval within the modulation period. The small size and the ability to reproduce the device (1) in standard semiconductor technologies make possible a cost-efficient integration of the device (1).
摘要翻译： 公开了半导体技术中的解调装置（1）。 装置（1）能够解调注入的调制电流。 设备（1）包括输入节点（IN1），采样级（DG1，IG1，GS1，IG2，DG2）和至少两个输出节点（D1，D2）。 采样级DG1，IG1，GS1，IG2，DG2）包括用于将调制的充电电流信号从输入节点（IN1）传送到分配的输出节点（D1，D2）之一的传送装置（GL，GM，GR） 到调制周期内的相应时间间隔。 在标准半导体技术中，小尺寸和再现设备（1）的能力使得设备（1）的成本有效的集成成为可能。
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公开(公告)号：US20090224139A1
公开(公告)日：2009-09-10
申请号：US12397825
申请日：2009-03-04
申请人： Bernhard Buettgen , Michael Lehmann , Jonas Felber
发明人： Bernhard Buettgen , Michael Lehmann , Jonas Felber
CPC分类号： H01L27/14609 , G01S7/4914 , G01S17/89 , H01L27/14641
摘要： A pixel based on a pinned-photodiode structure that creates a lateral electric drift field. The combination of the photodiode with adjacent CCD gates enables the utilization of the drift field device in applications such as 3-D imaging. Compared with recently used demodulation devices in CCD or CMOS technology, the new pinned-photodiode based drift field pixel has its advantages in its wide independence of the quantum efficiency on the optical wavelength, its high optical sensitivity, the opportunity of easily creating arbitrary potential distributions in the semiconductor, the straight-forward routing capabilities and the generation of perfectly linear potential distributions in the semiconductor.
摘要翻译： 基于钉扎 - 光电二极管结构的像素，其产生横向电漂移场。 光电二极管与相邻CCD门的组合使得能够在诸如3-D成像的应用中利用漂移场设备。 与CCD或CMOS技术中最近使用的解调装置相比，新的基于pinned-光电二极管的漂移场像素在量子效率对光波长的广泛独立性，光学灵敏度高，容易创建任意电位分布的机会方面具有优势 在半导体中，直接路由能力和在半导体中产生完美的线性电势分布。
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公开(公告)号：US07889257B2
公开(公告)日：2011-02-15
申请号：US12175091
申请日：2008-07-17
CPC分类号： G01S17/89
摘要： An integrated sensor chip comprises at least one pixel. The at least one pixel comprises: one or several integration regions for receiving and storing photogenerated charges; a modulation region that moves the photogenerated charges to be stored in the at least two integration regions; and sense nodes, in which each of the sense nodes is associated with one of the integration regions, into which the photogenerated charges are moved from the integration regions during a readout stage. The chip comprises: at least one function generator for generating a time-varying function that is applied to the integration regions during the readout cycle to move the photogenerated changes to the sense nodes; a counter generates a count during the generation of the time-varying function; and registers, in which each of the registers is associated with one of the sense nodes during read out, for storing digital values; wherein the registers store the count in response to the associated sense node receiving photogenerated charges from the associated integration regions.
摘要翻译： 集成传感器芯片包括至少一个像素。 所述至少一个像素包括：用于接收和存储光生电荷的一个或几个积分区域; 调制区域，其移动要存储在所述至少两个积分区域中的光生电荷; 以及感测节点，其中每个感测节点与所述积分区域之一相关联，所述积分区域在读出阶段期间从所述积分区域移动所述光生电荷。 该芯片包括：至少一个功能发生器，用于产生在读出周期期间应用于积分区域的时变功能，以将光生变化移动到感测节点; 在产生时变功能期间，计数器产生计数; 和寄存器，其中每个寄存器在读出期间与感测节点之一相关联，用于存储数字值; 其中所述寄存器响应于所述相关联的感测节点从相关联的积分区域接收光生电荷而存储所述计数。
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