公开(公告)号：US09379107B2

公开(公告)日：2016-06-28

申请号：US14693017

申请日：2015-04-22

申请人： Bok-Young Lee ,  Jeong-Yun Lee ,  Dong-Hyun Kim ,  Myeong-Cheol Kim ,  Dong-Woo Han

发明人： Bok-Young Lee ,  Jeong-Yun Lee ,  Dong-Hyun Kim ,  Myeong-Cheol Kim ,  Dong-Woo Han

IPC分类号： H01L29/76 ,  H01L27/088 ,  H01L27/02

CPC分类号： H01L21/823821 ,  H01L21/30604 ,  H01L21/823828 ,  H01L27/0207 ,  H01L27/0886 ,  H01L29/6656 ,  H01L29/66795

摘要： Provided are a semiconductor device and a method of fabricating a semiconductor device. The semiconductor device includes a first active fin and a second active fin which protrude from a substrate and extend along a first direction, a first gate structure which is on the first active fin to extend along a second direction intersecting the first direction, a second gate structure which is located adjacent to the first gate structure in the second direction and is on the second active fin to extend along the second direction, and a dummy structure which is in a space between the first gate structure and the second gate structure.

摘要翻译： 提供半导体器件和制造半导体器件的方法。 半导体器件包括从衬底突出并沿第一方向延伸的第一有源鳍片和第二有源鳍片，第一栅极结构，其在第一有源鳍片上沿着与第一方向相交的第二方向延伸;第二栅极 结构，其位于第二方向上与第一栅极结构相邻并且在第二有源鳍上沿着第二方向延伸;以及虚设结构，其位于第一栅极结构和第二栅极结构之间的空间中。