公开(公告)号：US20040058153A1

公开(公告)日：2004-03-25

申请号：US10424295

申请日：2003-04-28

申请人： Boston College

发明人： Zhifeng F. Ren ,  Yi Tu

IPC分类号： C23C016/00 ,  B32B009/00

CPC分类号： B82Y30/00 ,  B01J23/76 ,  B01J23/866 ,  B01J35/006 ,  B01J37/0238 ,  B01J37/349 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/08 ,  C01B2202/34 ,  C01B2202/36 ,  D01F9/1271 ,  D01F9/1272 ,  D01F9/1275 ,  D01F9/1276 ,  H01L51/0048 ,  H01L51/0052 ,  Y10S977/722 ,  Y10T428/2918 ,  Y10T428/30

摘要： CNT materials comprising aligned carbon nanotubes (CNTs) with pre-determined site densities, catalyst substrate materials for obtaining them and methods for forming aligned CNTs with controllable densities on such catalyst substrate materials are described. The fabrication of films comprising site-density controlled vertically aligned CNT arrays of the invention with variable field emission characteristics, whereby the field emission properties of the films are controlled by independently varying the length of CNTs in the aligned array within the film or by independently varying inter-tubule spacing of the CNTs within the array (site density) are disclosed. The fabrcation of microelectrode arrays (MEAs) formed utilizing the carbon nanotube material of the invention is also described.

摘要翻译： 描述了包含具有预定位点密度的对准的碳纳米管（CNT）的CNT材料，用于获得它们的催化剂底物材料以及在这种催化剂衬底材料上形成具有可控密度的对准的CNT的方法。 制造包含具有可变场发射特性的本发明的位置密度受控垂直排列的CNT阵列的膜，由此通过独立地改变膜内对齐的阵列中的CNT的长度或通过独立地改变来控制膜的场发射性质 公开了阵列内CNTs的管间距（位置密度）。 还描述了利用本发明的碳纳米管材料形成的微电极阵列（MEA）的制造。