公开(公告)号：US20020070841A1

公开(公告)日：2002-06-13

申请号：US09879692

申请日：2001-06-12

Applicant: Boston MicroSystems, Inc.

Inventor： Dharanipal Doppalapudi ,  Theodore D. Moustakas ,  Richard Mlcak ,  Harry L. Tuller

IPC: G01L001/22

CPC classification number: H01L29/155 ,  G01L1/2293 ,  Y10T29/49099 ,  Y10T29/49101

Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.