公开(公告)号：US20030119220A1

公开(公告)日：2003-06-26

申请号：US10284048

申请日：2002-10-29

Applicant: Boston MicroSystems, Inc.

Inventor： Richard Mlcak ,  Dharanipal Doppalapudi ,  Harry L. Tuller

IPC: H01L021/00

CPC classification number: B81B3/0089 ,  B81B3/0094 ,  B81B2201/06 ,  B81B2203/0127 ,  H01L41/094 ,  H01L41/18 ,  H01L41/316 ,  H01L41/331 ,  H01L41/332

Abstract: A micromechanical device includes a single crystal micromachined micromechanical structure. At least a portion of the micromechanical structure is capable of performing a mechanical motion. A piezoelectric epitaxial layer covers at least a part of said portion of the micromechanical structure that is capable of performing a mechanical motion. The micromechanical structure and piezoelectric epitaxial layer are composed of different materials. At least one electrically conducting layer is formed to cover at least part of the piezoelectric epitaxial layer.

Abstract translation: 微机械装置包括单晶微加工微机械结构。 微机械结构的至少一部分能够执行机械运动。 压电外延层覆盖能够执行机械运动的微机械结构的所述部分的至少一部分。 微机械结构和压电外延层由不同的材料组成。 形成至少一个导电层以覆盖至少部分压电外延层。

公开(公告)号：US20020070841A1

公开(公告)日：2002-06-13

申请号：US09879692

申请日：2001-06-12

Applicant: Boston MicroSystems, Inc.

Inventor： Dharanipal Doppalapudi ,  Theodore D. Moustakas ,  Richard Mlcak ,  Harry L. Tuller

IPC: G01L001/22

CPC classification number: H01L29/155 ,  G01L1/2293 ,  Y10T29/49099 ,  Y10T29/49101

Abstract: A piezoresistor having a base substrate with a quantum well structure formed on the base substrate. The quantum well structure includes at least one quantum well layer bounded by barrier layers. The barrier layers are formed from a material having a larger bandgap than the at least one quantum well layer.