公开(公告)号：US20120049274A1

公开(公告)日：2012-03-01

申请号：US12872201

申请日：2010-08-31

申请人： Brahim Elattari ,  Franz Hirler

发明人： Brahim Elattari ,  Franz Hirler

IPC分类号： H01L29/78 ,  H01L21/761 ,  H01L29/06

CPC分类号： H01L21/743 ,  H01L29/0615 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7809 ,  H01L29/781

摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity, an epitaxial layer of a second conductivity on the substrate and a buried layer of the second conductivity interposed between the substrate and the epitaxial layer. A first trench structure extends through the epitaxial layer and the buried layer to the substrate and includes sidewall insulation and conductive material in electrical contact with the substrate at a bottom of the first trench structure. A second trench structure extends through the epitaxial layer to the buried layer and includes sidewall insulation and conductive material in electrical contact with the buried layer at a bottom of the second trench structure. A region of insulating material laterally extends from the conductive material of the first trench structure to the conductive material of the second trench structure and longitudinally extends to a substantial depth of the second trench structure.

摘要翻译： 半导体结构包括第一导电性的半导体衬底，衬底上具有第二导电性的外延层，以及插入在衬底和外延层之间的第二导电体的掩埋层。 第一沟槽结构延伸穿过外延层和掩埋层到衬底，并且包括在第一沟槽结构的底部与衬底电接触的侧壁绝缘和导电材料。 第二沟槽结构延伸穿过外延层到掩埋层，并且包括在第二沟槽结构的底部与掩埋层电接触的侧壁绝缘体和导电材料。 绝缘材料的区域从第一沟槽结构的导电材料横向延伸到第二沟槽结构的导电材料，并纵向延伸到第二沟槽结构的基本深度。

公开(公告)号：US08378445B2

公开(公告)日：2013-02-19

申请号：US12872201

申请日：2010-08-31

申请人： Brahim Elattari ,  Franz Hirler

发明人： Brahim Elattari ,  Franz Hirler

IPC分类号： H01L21/4763 ,  H01L21/762 ,  H01L29/06

CPC分类号： H01L21/743 ,  H01L29/0615 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7809 ,  H01L29/781

摘要： A semiconductor structure includes a semiconductor substrate of a first conductivity, an epitaxial layer of a second conductivity on the substrate and a buried layer of the second conductivity interposed between the substrate and the epitaxial layer. A first trench structure extends through the epitaxial layer and the buried layer to the substrate and includes sidewall insulation and conductive material in electrical contact with the substrate at a bottom of the first trench structure. A second trench structure extends through the epitaxial layer to the buried layer and includes sidewall insulation and conductive material in electrical contact with the buried layer at a bottom of the second trench structure. A region of insulating material laterally extends from the conductive material of the first trench structure to the conductive material of the second trench structure and longitudinally extends to a substantial depth of the second trench structure.

摘要翻译： 半导体结构包括第一导电性的半导体衬底，衬底上具有第二导电性的外延层，以及插入在衬底和外延层之间的第二导电体的掩埋层。 第一沟槽结构延伸穿过外延层和掩埋层到衬底，并且包括在第一沟槽结构的底部与衬底电接触的侧壁绝缘和导电材料。 第二沟槽结构延伸穿过外延层到掩埋层，并且包括在第二沟槽结构的底部与掩埋层电接触的侧壁绝缘体和导电材料。 绝缘材料的区域从第一沟槽结构的导电材料横向延伸到第二沟槽结构的导电材料，并纵向延伸到第二沟槽结构的基本深度。