公开(公告)号：US07919815B1

公开(公告)日：2011-04-05

申请号：US11365465

申请日：2006-03-01

申请人： Brahmanandam Tanikella ,  Elizabeth Thomas ,  Frank L. Csillag ,  Palaniappan Chinnakaruppan ,  Jadwiga Jaroniec ,  Eric Virey ,  Robert A. Rizzuto

发明人： Brahmanandam Tanikella ,  Elizabeth Thomas ,  Frank L. Csillag ,  Palaniappan Chinnakaruppan ,  Jadwiga Jaroniec ,  Eric Virey ,  Robert A. Rizzuto

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L23/58

CPC分类号： H01L21/86 ,  Y10S438/974

摘要： Wafer suitable for semiconductor deposition application can be fabricated to have low bow, warp, total thickness variation, taper, and total indicated reading properties. The wafers can be fabricated by cutting a boule to produce rough-cut wafers, lapping the rough-cut wafers, etching the lapped wafers to remove a defect, deformation zone and relieve residual stress, and chemically mechanically polishing the etched wafers to desired finish properties. Etching can be performed by immersion in a heated etching solution comprising sulfuric acid or a mixture of sulfuric and phosphoric acids. A low pH slurry utilized in chemical mechanical polishing of the spinel wafer can comprise α-Al2O3 and an organic phosphate.

摘要翻译： 可以制造适用于半导体沉积应用的晶片，具有低的弓，翘曲，总厚度变化，锥度和总体指示的读取特性。 可以通过切割晶片来制造晶片来制造粗切晶片，研磨粗切晶片，蚀刻重叠的晶片以去除缺陷，变形区域并减轻残余应力，以及化学机械抛光所蚀刻的晶片以达到期望的精加工性能 。 可以通过浸渍在包含硫酸或硫酸和磷酸的混合物的加热蚀刻溶液中进行蚀刻。 在尖晶石晶片的化学机械抛光中使用的低pH浆料可以包含α-Al 2 O 3和有机磷酸盐。