公开(公告)号：US10985059B2

公开(公告)日：2021-04-20

申请号：US16178306

申请日：2018-11-01

申请人： Brian Paul Wagner ,  Christopher F. Kirby ,  Michael Rennie ,  James T. Kelliher ,  Khyhouth Lim

发明人： Brian Paul Wagner ,  Christopher F. Kirby ,  Michael Rennie ,  James T. Kelliher ,  Khyhouth Lim

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L39/24

摘要： A method is provided of forming a superconductor device interconnect structure. The method comprises forming a first dielectric layer overlying a substrate and forming a superconducting interconnect element in the first dielectric layer. The superconducting interconnect element includes a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The superconductor device interconnect structure is moved into a dielectric deposition chamber. The method further comprises performing a cleaning process on a top surface of the first interconnect layer in the dielectric deposition chamber to remove oxidization from a top surface of the first interconnect layer, and depositing a second dielectric layer over the first interconnect layer in the dielectric deposition chamber.